Part Details for AS4C16M16D1-5TCN by Alliance Memory Inc
Results Overview of AS4C16M16D1-5TCN by Alliance Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AS4C16M16D1-5TCN Information
AS4C16M16D1-5TCN by Alliance Memory Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for AS4C16M16D1-5TCN
AS4C16M16D1-5TCN CAD Models
AS4C16M16D1-5TCN Part Data Attributes
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AS4C16M16D1-5TCN
Alliance Memory Inc
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Datasheet
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AS4C16M16D1-5TCN
Alliance Memory Inc
Synchronous DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOPII-66
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ALLIANCE MEMORY INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSSOP66,.46 | |
Pin Count | 66 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Samacsys Manufacturer | Alliance Memory | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PDSO-G66 | |
JESD-609 Code | e3/e6 | |
Length | 22.22 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 66 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSSOP66,.46 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.04 A | |
Supply Current-Max | 0.235 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.65 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for AS4C16M16D1-5TCN
This table gives cross-reference parts and alternative options found for AS4C16M16D1-5TCN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C16M16D1-5TCN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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M2S56D40ATP-60UL | Elpida Memory Inc | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | AS4C16M16D1-5TCN vs M2S56D40ATP-60UL |
V58C2256164SHUN6 | ProMOS Technologies Inc | Check for Price | DDR DRAM, 16MX16, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | AS4C16M16D1-5TCN vs V58C2256164SHUN6 |
HY5DU561622DTP-J | SK Hynix Inc | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | AS4C16M16D1-5TCN vs HY5DU561622DTP-J |
EDD2516AKTA-6B | Elpida Memory Inc | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | AS4C16M16D1-5TCN vs EDD2516AKTA-6B |
V58C2256164SHLT6I | ProMOS Technologies Inc | Check for Price | DDR DRAM, 16MX16, CMOS, PDSO66, 0.400 INCH, PLASTIC, MS-024FC, TSOP2-66 | AS4C16M16D1-5TCN vs V58C2256164SHLT6I |
HYB25D256160CT-6 | Qimonda AG | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | AS4C16M16D1-5TCN vs HYB25D256160CT-6 |
W9425G6EH-5 | Winbond Electronics Corp | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | AS4C16M16D1-5TCN vs W9425G6EH-5 |
K4D551638F-TC600 | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | AS4C16M16D1-5TCN vs K4D551638F-TC600 |
MT46V16M16P-6TIT | Micron Technology Inc | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | AS4C16M16D1-5TCN vs MT46V16M16P-6TIT |
MT46V16M16P-6TLH | Micron Technology Inc | Check for Price | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | AS4C16M16D1-5TCN vs MT46V16M16P-6TLH |