Part Details for APTMC60TLM14CAG by Microchip Technology Inc
Results Overview of APTMC60TLM14CAG by Microchip Technology Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APTMC60TLM14CAG Information
APTMC60TLM14CAG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APTMC60TLM14CAG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
APTMC60TLM14CAG-ND
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DigiKey | MOSFET 4N-CH 1200V 219A SP6 Lead time: 77 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
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NAC | CC6232 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Container: Tube | 0 |
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RFQ | |
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DISTI #
APTMC60TLM14CA
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Richardson RFPD | SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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DISTI #
APTMC60TLM14CAG
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Avnet Silica | Trans MOSFET Array Dual NCH 1200V 219A 8Pin Case SP6P (Alt: APTMC60TLM14CAG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 38 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for APTMC60TLM14CAG
APTMC60TLM14CAG CAD Models
APTMC60TLM14CAG Part Data Attributes
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APTMC60TLM14CAG
Microchip Technology Inc
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Datasheet
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APTMC60TLM14CAG
Microchip Technology Inc
Power Field-Effect Transistor, 215A I(D), 1-Element, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 77 Weeks | |
| Drain Current-Max (ID) | 215 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 125 °C | |
| Power Dissipation-Max (Abs) | 1000 W |