Part Details for APTMC120HM17CT3AG by Microsemi Corporation
Results Overview of APTMC120HM17CT3AG by Microsemi Corporation
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Applications
Industrial Automation
Electronic Manufacturing
APTMC120HM17CT3AG Information
APTMC120HM17CT3AG by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APTMC120HM17CT3AG
APTMC120HM17CT3AG CAD Models
APTMC120HM17CT3AG Part Data Attributes
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APTMC120HM17CT3AG
Microsemi Corporation
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Datasheet
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APTMC120HM17CT3AG
Microsemi Corporation
Power Field-Effect Transistor, 147A I(D), 1200V, 0.017ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP3F, 25 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, SP3F, 25 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | COMPLEX | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 147 A | |
| Drain-source On Resistance-Max | 0.017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X20 | |
| Number of Elements | 4 | |
| Number of Terminals | 20 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
APTMC120HM17CT3AG Frequently Asked Questions (FAQ)
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Microsemi recommends a thermal pad layout with a minimum of 2 oz copper thickness, and a thermal via array with a minimum of 10 vias under the package to ensure optimal heat dissipation.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure proper airflow. Additionally, consider using a thermal interface material (TIM) with a high thermal conductivity to minimize thermal resistance.
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Monitor the junction temperature (Tj), case temperature (Tc), and thermal resistance (Rth) to prevent overheating. Use the thermal monitoring features of the device, such as the thermal sense pin, to track temperature and take corrective action if necessary.
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Follow standard ESD handling procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging materials. Ensure that all personnel handling the device are properly grounded, and use ESD-protected tools and equipment during assembly.
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Store the devices in their original packaging, in a dry, cool place (less than 30°C and 60% RH). Avoid exposing the devices to direct sunlight, moisture, or extreme temperatures. Handle the devices by the body, not the leads, to prevent mechanical stress.