Datasheets
APTM50AM24SG by:

Power Field-Effect Transistor, 150A I(D), 500V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APTM50AM24SG by Microchip Technology Inc

Results Overview of APTM50AM24SG by Microchip Technology Inc

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APTM50AM24SG Information

APTM50AM24SG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APTM50AM24SG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5487
Newark Pm-Mosfet-7-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTM50AM24SG RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $204.6000
  • 50 $197.7800
  • 100 $190.9600
  • 250 $190.9600
  • 500 $190.9600
$190.9600 / $204.6000 Buy Now
DISTI # APTM50AM24SG-ND
DigiKey MOSFET 2N-CH 500V 150A SP6 Min Qty: 1 Lead time: 20 Weeks Container: Bulk 31
In Stock
  • 1 $213.1200
$213.1200 Buy Now
DISTI # APTM50AM24SG
Avnet Americas Trans MOSFET Array Dual N-CH 500V 150A 7-Pin SP6 - Rail/Tube (Alt: APTM50AM24SG) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 5 $213.1250
  • 7 $209.6913
  • 20 $206.2916
  • 30 $202.8796
  • 50 $199.4852
$199.4852 / $213.1250 Buy Now
DISTI # 494-APTM50AM24SG
Mouser Electronics MOSFET Modules PM-MOSFET-7-SP6C RoHS: Compliant 0
  • 1 $213.1200
$213.1200 Order Now
DISTI # APTM50AM24SG
Microchip Technology Inc CC6051, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days 0

Alternates Available
  • 1 $204.6000
  • 50 $197.7800
  • 100 $190.9600
  • 250 $184.1400
  • 500 $177.3200
  • 1,000 $170.5000
  • 5,000 $161.9800
$161.9800 / $204.6000 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Module - 2 N-Channel (Half Bridge) - 500 V - 150A Continuous Drain (Id) @ 25°C - 28mOhm @ 75A, 10V - SP6 Package - Chassis Mount. RoHS: Compliant 15 On Order
  • 1 $212.0600
  • 2 $209.9700
  • 3 $208.9200
  • 4 $207.8800
  • 5 $206.8400
$206.8400 / $212.0600 Buy Now
DISTI # APTM50AM24SG
IBS Electronics APTM50AM24SG SERIES 500 V 28 MOHMS N-CH MOSFET POWER MODULE - SP-6 Min Qty: 1 Package Multiple: 1 0
  • 1 $316.7840
  • 3 $311.5450
  • 4 $310.1930
  • 10 $305.9160
  • 15 $301.6910
$301.6910 / $316.7840 Buy Now
NAC CC6051 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube 0
  • 1 $243.5700
  • 100 $224.3400
  • 500 $213.1300
  • 800 $207.9300
$207.9300 / $243.5700 Buy Now
DISTI # APTM50AM24SG
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 5 0
  • 5 $230.3500
  • 25 $224.4000
$224.4000 / $230.3500 Buy Now
DISTI # APTM50AM24SG
Avnet Silica Trans MOSFET Array Dual NCH 500V 150A 7Pin SP6 (Alt: APTM50AM24SG) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Silica - 0
Buy Now
Master Electronics MOSFET (Metal Oxide) Module - 2 N-Channel (Half Bridge) - 500 V - 150A Continuous Drain (Id) @ 25°C - 28mOhm @ 75A, 10V - SP6 Package - Chassis Mount. RoHS: Compliant 15 On Order
  • 1 $212.0600
  • 2 $209.9700
  • 3 $208.9200
  • 4 $207.8800
  • 5 $206.8400
$206.8400 / $212.0600 Buy Now

Part Details for APTM50AM24SG

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APTM50AM24SG Part Data Attributes

APTM50AM24SG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APTM50AM24SG Microchip Technology Inc Power Field-Effect Transistor, 150A I(D), 500V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Avalanche Energy Rating (Eas) 1300 mJ
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 150 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X7
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 600 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APTM50AM24SG

This table gives cross-reference parts and alternative options found for APTM50AM24SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTM50AM24SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APTM50AM24SG Microsemi Corporation Check for Price Power Field-Effect Transistor, 150A I(D), 500V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP6, 7 PIN APTM50AM24SG vs APTM50AM24SG

APTM50AM24SG Related Parts

APTM50AM24SG Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The thermal vias should be connected to the thermal pad on the bottom of the package.

  • Ensure that the device is operated within the recommended temperature range (−40°C to +150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, ensure that the device is properly soldered and the PCB is designed for good thermal conductivity.

  • The maximum allowed voltage on the input pins is 5.5V. Exceeding this voltage may damage the device.

  • Use an ESD wrist strap or mat when handling the device. Ensure that the device is stored in an anti-static bag or container. Use ESD-protected equipment and follow proper ESD handling procedures.

  • The recommended soldering profile is a peak temperature of 260°C for 10-30 seconds. The device should be soldered using a soldering iron with a temperature-controlled tip.

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