Datasheets
APTM20UM03FAG by:

Power Field-Effect Transistor, 580A I(D), 200V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APTM20UM03FAG by Microchip Technology Inc

Results Overview of APTM20UM03FAG by Microchip Technology Inc

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APTM20UM03FAG Information

APTM20UM03FAG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APTM20UM03FAG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5482
Newark Pm-Mosfet-Fredfet-7-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTM20UM03FAG RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $255.1400
  • 50 $246.6400
  • 100 $238.1300
  • 250 $238.1300
  • 500 $238.1300
$238.1300 / $255.1400 Buy Now
DISTI # APTM20UM03FAG-ND
DigiKey MOSFET N-CH 200V 580A SP6 Min Qty: 4 Lead time: 26 Weeks Container: Bulk Temporarily Out of Stock
  • 4 $265.7750
$265.7750 Buy Now
DISTI # APTM20UM03FAG
Avnet Americas Trans MOSFET N-CH 200V 580A 5-Pin Case SP6 - Rail/Tube (Alt: APTM20UM03FAG) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 4 $265.7750
  • 6 $261.4930
  • 10 $257.2535
  • 20 $252.9986
  • 40 $248.7657
$248.7657 / $265.7750 Buy Now
DISTI # 494-APTM20UM03FAG
Mouser Electronics MOSFET Modules PM-MOSFET-FREDFET-7-SP6C RoHS: Compliant 0
  • 1 $265.7700
$265.7700 Order Now
DISTI # APTM20UM03FAG
Microchip Technology Inc CC6049, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days 0

Alternates Available
  • 1 $255.1400
  • 50 $246.6400
  • 100 $238.1300
  • 250 $229.6300
  • 500 $221.1200
  • 1,000 $212.6200
  • 5,000 $201.9900
$201.9900 / $255.1400 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 1 $425.2400
  • 2 $318.9300
  • 3 $297.6700
  • 4 $291.7100
$291.7100 / $425.2400 Buy Now
DISTI # APTM20UM03FAG
IBS Electronics APTM20UM03FAG by Microchip is a high-performance power module featuring low conduction losses, high-speed switching, and robust thermal management, ideal for efficient power conversion applications. Min Qty: 3 Package Multiple: 1 0
  • 3 $360.8800
  • 6 $357.3050
  • 9 $355.2380
  • 12 $353.7690
  • 15 $349.1540
$349.1540 / $360.8800 Buy Now
NAC CC6049 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube 0
  • 1 $303.7400
  • 100 $279.7600
  • 500 $265.7700
  • 800 $259.2900
$259.2900 / $303.7400 Buy Now
DISTI # APTM20UM03FAG
Richardson RFPD POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # APTM20UM03FAG
Avnet Silica Trans MOSFET NCH 200V 580A 5Pin Case SP6 (Alt: APTM20UM03FAG) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APTM20UM03FAG
EBV Elektronik Trans MOSFET NCH 200V 580A 5Pin Case SP6 (Alt: APTM20UM03FAG) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 0
  • 1 $425.2400
  • 2 $318.9300
  • 3 $297.6700
  • 4 $291.7100
$291.7100 / $425.2400 Buy Now

Part Details for APTM20UM03FAG

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APTM20UM03FAG Part Data Attributes

APTM20UM03FAG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APTM20UM03FAG Microchip Technology Inc Power Field-Effect Transistor, 580A I(D), 200V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description SP6 PACKAGE, 2 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 580 A
Drain-source On Resistance-Max 0.0036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X2
JESD-609 Code e1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 2320 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON

Alternate Parts for APTM20UM03FAG

This table gives cross-reference parts and alternative options found for APTM20UM03FAG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTM20UM03FAG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
VMO580-02F Littelfuse Inc Check for Price Power Field-Effect Transistor, 580A I(D), 200V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, APTM20UM03FAG vs VMO580-02F
APTM20UM03FAG Microsemi Corporation Check for Price Power Field-Effect Transistor, 580A I(D), 200V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SP6 PACKAGE, 2 PIN APTM20UM03FAG vs APTM20UM03FAG
VMO580-02T Littelfuse Inc Check for Price Power Field-Effect Transistor, 580A I(D), 200V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, APTM20UM03FAG vs VMO580-02T
VMO580-02T IXYS Corporation Check for Price Power Field-Effect Transistor, 580A I(D), 200V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, APTM20UM03FAG vs VMO580-02T

APTM20UM03FAG Related Parts

APTM20UM03FAG Frequently Asked Questions (FAQ)

  • Microchip recommends a thermal pad layout with a minimum of 2 oz copper thickness, and a thermal via array with a minimum of 10 vias under the package to ensure optimal thermal performance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to consider derating the device's power dissipation according to the ambient temperature.

  • Microchip recommends soldering the APTM20UM03FAG using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds.

  • Yes, the APTM20UM03FAG is qualified for automotive and high-reliability applications, and meets the requirements of AEC-Q100 and ISO/TS 16949.

  • The APTM20UM03FAG has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing, such as using an ESD wrist strap or mat.

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