Part Details for APTM10AM02FG by Microsemi Corporation
Results Overview of APTM10AM02FG by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APTM10AM02FG Information
APTM10AM02FG by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APTM10AM02FG
APTM10AM02FG CAD Models
APTM10AM02FG Part Data Attributes
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APTM10AM02FG
Microsemi Corporation
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Datasheet
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APTM10AM02FG
Microsemi Corporation
Power Field-Effect Transistor, 495A I(D), 100V, 0.0025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP6, 7 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, SP6, 7 PIN | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 495 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X7 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1900 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APTM10AM02FG
This table gives cross-reference parts and alternative options found for APTM10AM02FG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTM10AM02FG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| APTM10AM02FG | Microchip Technology Inc | $283.7009 | Power Field-Effect Transistor, 495A I(D), 100V, 0.0025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APTM10AM02FG vs APTM10AM02FG |
APTM10AM02FG Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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To ensure reliable operation in high-radiation environments, it is recommended to follow the radiation-hardened design guidelines provided by Microsemi Corporation. This includes using radiation-tolerant components, implementing error correction mechanisms, and designing for single-event effects (SEEs).
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The BIST feature is limited to detecting faults in the device's digital logic and does not test the analog circuits. Additionally, the BIST feature may not detect all possible faults, and it is recommended to use external test equipment to ensure comprehensive testing.
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A reliable POR circuit can be implemented using an external resistor-capacitor (RC) network connected to the POR pin. The RC network should be designed to provide a minimum pulse width of 10 ms to ensure reliable reset operation.
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For high-power applications, it is essential to ensure efficient heat dissipation to prevent overheating. This can be achieved by using a heat sink, thermal interface material, and a well-designed PCB layout that minimizes thermal resistance.