Part Details for APTM100UM65SAG by Microsemi Corporation
Results Overview of APTM100UM65SAG by Microsemi Corporation
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APTM100UM65SAG Information
APTM100UM65SAG by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APTM100UM65SAG
APTM100UM65SAG CAD Models
APTM100UM65SAG Part Data Attributes
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APTM100UM65SAG
Microsemi Corporation
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Datasheet
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APTM100UM65SAG
Microsemi Corporation
Power Field-Effect Transistor, 145A I(D), 1000V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 145 A | |
| Drain-source On Resistance-Max | 0.078 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X2 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 580 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON |
APTM100UM65SAG Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a 2-4 layer board with a solid ground plane, placing thermal vias under the device, and using a thermal relief pattern around the device to reduce thermal resistance.
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To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation, use a heat sink, and ensure good airflow around the device. Additionally, consider using a thermocouple or thermistor to monitor the device's temperature.
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The APTM100UM65SAG has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures when handling the device. This includes using an ESD wrist strap, ESD mat, and storing the device in an anti-static bag.
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The APTM100UM65SAG is not specifically designed for radiation-hardened applications. However, Microsemi Corporation offers radiation-hardened versions of similar devices. Contact Microsemi Corporation for more information on their radiation-hardened product offerings.
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The recommended soldering and rework conditions for the APTM100UM65SAG involve using a soldering iron with a temperature of 250°C (max) and a dwell time of 3 seconds (max). For rework, use a hot air rework station with a temperature of 220°C (max) and a dwell time of 10 seconds (max).