Part Details for APTM100A13SG by Microchip Technology Inc
Results Overview of APTM100A13SG by Microchip Technology Inc
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APTM100A13SG Information
APTM100A13SG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APTM100A13SG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5428
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Newark | Pm-Mosfet-7-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTM100A13SG RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$193.7500 / $207.5900 | Buy Now |
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DISTI #
APTM100A13SG-ND
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DigiKey | MOSFET 2N-CH 1000V 65A SP6 Min Qty: 1 Lead time: 20 Weeks Container: Bulk | Temporarily Out of Stock |
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$216.2400 | Buy Now |
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DISTI #
APTM100A13SG
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Avnet Americas | Trans MOSFET Array Dual N-CH 1KV 65A 7-Pin SP6 - Rail/Tube (Alt: APTM100A13SG) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$192.2111 / $207.5900 | Buy Now |
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DISTI #
494-APTM100A13SG
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Mouser Electronics | MOSFET Modules PM-MOSFET-7-SP6C RoHS: Compliant | 0 |
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$216.2300 | Order Now |
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DISTI #
APTM100A13SG
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Microchip Technology Inc | CC6010, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days |
0 Alternates Available |
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$164.3400 / $207.5900 | Buy Now |
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Onlinecomponents.com | Phase leg Series 1000V 156mOhm 562nC Power Module MOSFET RoHS: Compliant |
2 In Stock |
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$205.6000 / $219.5300 | Buy Now |
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DISTI #
81008241
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Verical | Trans MOSFET N-CH 1KV 65A 7-Pin Case SP-6 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2417 | Americas - 2 |
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$267.2800 / $285.3890 | Buy Now |
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DISTI #
APTM100A13SG
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TME | Module, diode/transistor, 1kV, 49A, SP6C, FASTON connectors,screw Min Qty: 1 | 0 |
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$338.5900 / $426.6200 | RFQ |
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NAC | CC6010 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube | 0 |
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$210.9600 / $247.1300 | Buy Now |
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DISTI #
APTM100A13SG
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 5 | 0 |
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$227.6700 / $233.7100 | Buy Now |
Part Details for APTM100A13SG
APTM100A13SG CAD Models
APTM100A13SG Part Data Attributes
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APTM100A13SG
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APTM100A13SG
Microchip Technology Inc
Power Field-Effect Transistor, 65A I(D), 1000V, 0.156ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, SP6, 7 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1300 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.156 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X7 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APTM100A13SG
This table gives cross-reference parts and alternative options found for APTM100A13SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTM100A13SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APTM100A13SCG | Microchip Technology Inc | $277.1111 | Power Field-Effect Transistor, 65A I(D), 1000V, 0.156ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APTM100A13SG vs APTM100A13SCG |
APTM100A13SG Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using thermal protection and overcurrent protection circuits.
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Exceeding the maximum junction temperature can lead to reduced lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure that the device is operated within the recommended temperature range to prevent damage.
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Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect against electrostatic discharge. Follow proper PCB design and handling practices to minimize ESD risks.
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When paralleling multiple devices, ensure that each device has its own current sense resistor and that the devices are properly synchronized. Also, consider the impact of paralleling on the overall system's thermal performance and reliability.