Part Details for APTGT200A120D3G by Microchip Technology Inc
Results Overview of APTGT200A120D3G by Microchip Technology Inc
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APTGT200A120D3G Information
APTGT200A120D3G by Microchip Technology Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APTGT200A120D3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5272
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Newark | Pm-Igbt-Tfs-D3 D3 Box Rohs Compliant: Yes |Microchip APTGT200A120D3G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$168.3800 / $180.4100 | Buy Now |
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DISTI #
APTGT200A120D3G-ND
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DigiKey | IGBT MODULE 1200V 300A 1040W D3 Min Qty: 5 Lead time: 26 Weeks Container: Bulk | Temporarily Out of Stock |
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$187.9240 | Buy Now |
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DISTI #
APTGT200A120D3G
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Avnet Americas | Trans IGBT Module N-CH 1.2KV 300A 7-Pin Case D3 - Boxed Product (Development Kits) (Alt: APTGT200A120D3G) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Box | 0 |
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$175.8980 / $187.9250 | Buy Now |
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DISTI #
494-APTGT200A120D3G
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Mouser Electronics | IGBT Modules PM-IGBT-TFS-D3 RoHS: Compliant | 0 |
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$187.9200 | Order Now |
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DISTI #
APTGT200A120D3G
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Microchip Technology Inc | DOR CC7014, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days |
0 Alternates Available |
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$142.8200 / $180.4100 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$178.6800 / $187.9300 | Buy Now |
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NAC | DOR CC7014 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Box | 0 |
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$183.3400 / $214.7700 | Buy Now |
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DISTI #
APTGT200A120D3G
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 5 | 0 |
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$197.8700 / $203.1100 | Buy Now |
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DISTI #
APTGT200A120D3G
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Avnet Silica | Trans IGBT Module NCH 12KV 300A 7Pin Case D3 (Alt: APTGT200A120D3G) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 28 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
APTGT200A120D3G
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EBV Elektronik | Trans IGBT Module NCH 12KV 300A 7Pin Case D3 (Alt: APTGT200A120D3G) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for APTGT200A120D3G
APTGT200A120D3G CAD Models
APTGT200A120D3G Part Data Attributes
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APTGT200A120D3G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APTGT200A120D3G
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | MODULE-7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 830 ns | |
| Turn-on Time-Nom (ton) | 400 ns |
Alternate Parts for APTGT200A120D3G
This table gives cross-reference parts and alternative options found for APTGT200A120D3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTGT200A120D3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FF200R12KT3HOSA1 | Infineon Technologies AG | $112.3763 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | APTGT200A120D3G vs FF200R12KT3HOSA1 |
| APTGT200A120G | Microchip Technology Inc | $192.8093 | Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel | APTGT200A120D3G vs APTGT200A120G |
| APTGT200A120D3 | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | APTGT200A120D3G vs APTGT200A120D3 |
| FF200R12KE4 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | APTGT200A120D3G vs FF200R12KE4 |
| FF200R12KE4HOSA1 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | APTGT200A120D3G vs FF200R12KE4HOSA1 |
| FF200R12KS4HOSA1 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | APTGT200A120D3G vs FF200R12KS4HOSA1 |
| APTGT200A120 | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | APTGT200A120D3G vs APTGT200A120 |
| BSM150GB120DN2 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, | APTGT200A120D3G vs BSM150GB120DN2 |
| MII200-12A4 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | APTGT200A120D3G vs MII200-12A4 |
| SKM300GB125D | SEMIKRON | Check for Price | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN | APTGT200A120D3G vs SKM300GB125D |
APTGT200A120D3G Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation according to the temperature derating curve provided in the datasheet.
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The maximum allowed voltage on the gate driver output is ±20V, with a maximum transient voltage of ±30V for a duration of less than 100ns.
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While the APTGT200A120D3G is optimized for use with Microchip's MOSFETs, it can be used with other MOSFETs or IGBTs. However, the user must ensure that the gate driver output voltage and current are compatible with the chosen device, and that the device's switching characteristics meet the application's requirements.
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To troubleshoot issues with the gate driver output, check the input signals, ensure proper power supply and decoupling, verify the PCB layout and thermal design, and use an oscilloscope to monitor the output signals and detect any anomalies or ringing.