Part Details for APTGLQ40DDA120CT3G by Microsemi Corporation
Results Overview of APTGLQ40DDA120CT3G by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
APTGLQ40DDA120CT3G Information
APTGLQ40DDA120CT3G by Microsemi Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APTGLQ40DDA120CT3G
APTGLQ40DDA120CT3G CAD Models
APTGLQ40DDA120CT3G Part Data Attributes
|
|
APTGLQ40DDA120CT3G
Microsemi Corporation
Buy Now
Datasheet
|
Compare Parts:
APTGLQ40DDA120CT3G
Microsemi Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Power Dissipation-Max (Abs) | 250 W | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| VCEsat-Max | 2.4 V |