Part Details for APTDF60H1201G by Microsemi Corporation
Results Overview of APTDF60H1201G by Microsemi Corporation
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Applications
Industrial Automation
Electronic Manufacturing
APTDF60H1201G Information
APTDF60H1201G by Microsemi Corporation is a Bridge Rectifier Diode.
Bridge Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Part Details for APTDF60H1201G
APTDF60H1201G CAD Models
APTDF60H1201G Part Data Attributes
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APTDF60H1201G
Microsemi Corporation
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Datasheet
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APTDF60H1201G
Microsemi Corporation
Bridge Rectifier Diode, 1 Phase, 82A, 1200V V(RRM), Silicon, ROHS COMPLIANT, SP1, 12 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, SP1, 12 PIN | |
| Pin Count | 12 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Breakdown Voltage-Min | 1200 V | |
| Case Connection | ISOLATED | |
| Configuration | BRIDGE, 4 ELEMENTS | |
| Diode Element Material | SILICON | |
| Diode Type | BRIDGE RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 3 V | |
| JESD-30 Code | R-XUFM-T12 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Non-rep Pk Forward Current-Max | 500 A | |
| Number of Elements | 4 | |
| Number of Phases | 1 | |
| Number of Terminals | 12 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Output Current-Max | 82 A | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Qualification Status | Not Qualified | |
| Rep Pk Reverse Voltage-Max | 1200 V | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | UPPER |
APTDF60H1201G Frequently Asked Questions (FAQ)
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Microsemi recommends a 2-layer PCB with a thermal pad connected to a large copper area on the bottom layer. The copper area should be at least 1 inch x 1 inch in size, and should be connected to a heat sink or a metal chassis for optimal thermal performance.
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To ensure reliable operation in high-temperature environments, Microsemi recommends following the recommended PCB layout, using a heat sink or metal chassis, and ensuring good airflow around the device. Additionally, the device should be operated within the recommended operating temperature range of -40°C to 150°C.
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The recommended gate drive voltage for the APTDF60H1201G is 15V. However, the device can tolerate gate drive voltages up to 20V, but this may affect the device's reliability and lifespan.
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Yes, the APTDF60H1201G can be used in a parallel configuration to increase current handling. However, Microsemi recommends following the recommended parallel operation guidelines, including ensuring identical device characteristics, using a common gate drive, and providing adequate thermal management.
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Microsemi recommends using a human body model (HBM) of 2kV and a machine model (MM) of 200V for ESD protection. The device is designed to withstand these levels of ESD, but additional protection may be necessary depending on the specific application.