Part Details for APTC80H29SCTG by Microchip Technology Inc
Results Overview of APTC80H29SCTG by Microchip Technology Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APTC80H29SCTG Information
APTC80H29SCTG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APTC80H29SCTG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5130
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Newark | Pm-Mosfet-Coolmos-Sbd-Sp4 Sp4 Tube Rohs Compliant: Yes |Microchip APTC80H29SCTG RoHS: Compliant Min Qty: 8 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$90.9700 / $144.7300 | Buy Now |
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NAC | DOR CC4065 RoHS: Compliant Min Qty: 8 Package Multiple: 1 Container: Tube | 0 |
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RFQ | |
DISTI #
APTC80H29SCTG
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Richardson RFPD | SILICON CARBIDE/SILICON HYBRID MODULES RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for APTC80H29SCTG
APTC80H29SCTG CAD Models
APTC80H29SCTG Part Data Attributes
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APTC80H29SCTG
Microchip Technology Inc
Buy Now
Datasheet
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APTC80H29SCTG
Microchip Technology Inc
Power Field-Effect Transistor, 15A I(D), 800V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, SP4, 14 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 27 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 670 mJ | |
Case Connection | ISOLATED | |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.29 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUFM-X14 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 4 | |
Number of Terminals | 14 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APTC80H29SCTG
This table gives cross-reference parts and alternative options found for APTC80H29SCTG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTC80H29SCTG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
APTC80H29SCT | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 15A I(D), 800V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APTC80H29SCTG vs APTC80H29SCT |