Part Details for APT9M100B by Microsemi Corporation
Results Overview of APT9M100B by Microsemi Corporation
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APT9M100B Information
APT9M100B by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT9M100B
APT9M100B CAD Models
APT9M100B Part Data Attributes
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APT9M100B
Microsemi Corporation
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Datasheet
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APT9M100B
Microsemi Corporation
Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-247AD | |
| Package Description | ROHS COMPLIANT, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 575 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
APT9M100B Frequently Asked Questions (FAQ)
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Microsemi provides a reference design guide and thermal management guidelines in the APT9M100B application note (document number: 13034). It's essential to follow these guidelines to ensure optimal performance, thermal stability, and reliability.
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Microsemi offers a comprehensive user guide (document number: 13035) that provides detailed information on biasing, configuration, and operation of the APT9M100B. Additionally, the company's technical support team can provide customized guidance for specific applications.
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The APT9M100B is designed to meet the requirements of MIL-PRF-38535, which includes radiation hardness and tolerance specifications. Microsemi provides detailed radiation testing and characterization data in the device's radiation report (document number: 13036).
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Yes, the APT9M100B can be used in non-space or commercial applications. However, it's essential to note that the device is designed and tested for space applications, and its performance and reliability may vary in other environments. Microsemi recommends consulting with their technical support team to discuss specific requirements and potential implications.
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The APT9M100B is available in a hermetically sealed ceramic package (CERDIP) and a plastic package (PDIP). Lead times may vary depending on the package option, quantity, and availability. It's recommended to contact Microsemi's sales team or authorized distributors for the most up-to-date information on lead times and package options.