Part Details for APT8014JLL by Microsemi Corporation
Results Overview of APT8014JLL by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
APT8014JLL Information
APT8014JLL by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT8014JLL
APT8014JLL CAD Models
APT8014JLL Part Data Attributes
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APT8014JLL
Microsemi Corporation
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Datasheet
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APT8014JLL
Microsemi Corporation
Power Field-Effect Transistor, 42A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | ISOTOP | |
| Package Description | ISOTOP-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Avalanche Energy Rating (Eas) | 3200 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 595 W | |
| Pulsed Drain Current-Max (IDM) | 168 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT8014JLL
This table gives cross-reference parts and alternative options found for APT8014JLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT8014JLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IXKN45N80C | IXYS Corporation | $26.9390 | Power Field-Effect Transistor, 44A I(D), 800V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXKN45N80C |
| APT8020JFLL | Microchip Technology Inc | $42.9640 | Power Field-Effect Transistor, 40A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT8014JLL vs APT8020JFLL |
| APT8024JFLL | Microchip Technology Inc | $47.5913 | Power Field-Effect Transistor, 29A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT8014JLL vs APT8024JFLL |
| APT8014JLL | Microchip Technology Inc | $57.1440 | Power Field-Effect Transistor, 42A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT8014JLL vs APT8014JLL |
| APT8014JFLL | Microchip Technology Inc | $64.1258 | Power Field-Effect Transistor, 42A I(D), 800V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT8014JLL vs APT8014JFLL |
| IXFN50N80Q2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXFN50N80Q2 |
| IXKN45N80C | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 44A I(D), 800V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXKN45N80C |
| APT8015JVFR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 44A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT8014JLL vs APT8015JVFR |
| IXFL60N80P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 40A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN | APT8014JLL vs IXFL60N80P |
| IXFN50N80Q2 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXFN50N80Q2 |
APT8014JLL Frequently Asked Questions (FAQ)
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Microsemi recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
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To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, use a heat sink if necessary, and consider derating the device's power dissipation according to the temperature derating curve provided in the datasheet.
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Microsemi recommends using low-ESR capacitors with a value of 10uF to 22uF for the input capacitor and 10uF to 47uF for the output capacitor. The capacitor's voltage rating should be at least 1.5 times the maximum input voltage.
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To troubleshoot issues with the enable pin, ensure that the EN pin is properly connected to a logic-level signal (either 0V or VCC) and that the signal is not floating. Also, verify that the EN pin is not being driven by a signal with a high impedance or a slow rise time.
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Microsemi recommends using a reflow soldering process with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. Hand soldering is not recommended due to the device's small size and high pin density.