Part Details for APT65GP60L2DQ2G by Microsemi Corporation
Results Overview of APT65GP60L2DQ2G by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
APT65GP60L2DQ2G Information
APT65GP60L2DQ2G by Microsemi Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT65GP60L2DQ2G
APT65GP60L2DQ2G CAD Models
APT65GP60L2DQ2G Part Data Attributes
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APT65GP60L2DQ2G
Microsemi Corporation
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Datasheet
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APT65GP60L2DQ2G
Microsemi Corporation
Insulated Gate Bipolar Transistor, 198A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264MAX, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-264AA | |
| Package Description | ROHS COMPLIANT, TO-264MAX, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 198 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 833 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 220 ns | |
| Turn-on Time-Nom (ton) | 85 ns |
Alternate Parts for APT65GP60L2DQ2G
This table gives cross-reference parts and alternative options found for APT65GP60L2DQ2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT65GP60L2DQ2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT65GP60L2DQ2G | Microchip Technology Inc | $21.0976 | Insulated Gate Bipolar Transistor, 198A I(C), 600V V(BR)CES, N-Channel, TO-264AA | APT65GP60L2DQ2G vs APT65GP60L2DQ2G |
APT65GP60L2DQ2G Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
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The APT65GP60L2DQ2G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and handling. Use an ESD wrist strap or mat, and ensure the device is stored in an anti-static bag.
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The APT65GP60L2DQ2G is not specifically designed for radiation-hardened applications. For such applications, consider using a radiation-hardened equivalent device or consult with Microsemi Corporation for custom solutions.
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Follow the standard soldering profiles for Pb-free soldering, with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure the device is not exposed to temperatures above 280°C (536°F).