Part Details for APT60GT60JRDQ3 by Microchip Technology Inc
Results Overview of APT60GT60JRDQ3 by Microchip Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT60GT60JRDQ3 Information
APT60GT60JRDQ3 by Microchip Technology Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT60GT60JRDQ3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
77AK0723
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Newark | Igbt-Combi, 600V, 60A, |Microchip APT60GT60JRDQ3 RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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NAC | FG, IGBT-COMBI, 600V, 60A, SOT-227 RoHS: Compliant Min Qty: 20 Package Multiple: 1 Container: Tube | 0 |
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RFQ |
Part Details for APT60GT60JRDQ3
APT60GT60JRDQ3 CAD Models
APT60GT60JRDQ3 Part Data Attributes
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APT60GT60JRDQ3
Microchip Technology Inc
Buy Now
Datasheet
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APT60GT60JRDQ3
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 105A I(C), 600V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 105 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 30 V | |
| JESD-30 Code | R-PUFM-X4 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 379 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 320 ns | |
| Turn-on Time-Nom (ton) | 51 ns |
APT60GT60JRDQ3 Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
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The maximum allowed voltage on the gate driver output is ±20V, with a maximum transient voltage of ±30V for a duration of less than 100ns. Exceeding these limits can damage the device.
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To configure the APT60GT60JRDQ3 for bootstrap operation, connect the VB pin to a voltage source (e.g., 12V) and the VCC pin to the bootstrap capacitor. Ensure the bootstrap capacitor is properly sized and placed close to the device to minimize parasitic inductance.
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The recommended dead time for the gate driver outputs is typically in the range of 100ns to 500ns, depending on the specific application requirements and the switching frequency. A longer dead time can help prevent shoot-through currents, but may also increase switching losses.