Part Details for APT60GT60JR by Microchip Technology Inc
Results Overview of APT60GT60JR by Microchip Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT60GT60JR Information
APT60GT60JR by Microchip Technology Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT60GT60JR
| Part # | Distributor | Description | Stock | Price | Buy | |
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NAC | FG, IGBT, 600V, 60A, SOT-227 RoHS: Compliant Min Qty: 20 Package Multiple: 1 Container: Tube | 0 |
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RFQ | |
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DISTI #
APT60GT60JR
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for APT60GT60JR
APT60GT60JR CAD Models
APT60GT60JR Part Data Attributes
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APT60GT60JR
Microchip Technology Inc
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Datasheet
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APT60GT60JR
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 93 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X4 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 378 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 495 ns | |
| Turn-on Time-Nom (ton) | 84 ns |
APT60GT60JR Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a metal plate to dissipate heat efficiently.
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Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow the recommended thermal design guidelines. Also, consider using a thermal interface material (TIM) between the device and the heat sink.
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The maximum allowed voltage on the gate driver output is 15V, but it's recommended to keep it below 12V to ensure reliable operation and minimize electromagnetic interference (EMI).
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Use external overcurrent protection (OCP) and overvoltage protection (OVP) circuits, such as fuses, current-sensing resistors, and voltage regulators, to prevent damage to the device.
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The recommended dead time is 100-200 ns to prevent shoot-through currents and ensure reliable operation. However, the optimal dead time may vary depending on the specific application and switching frequency.