Part Details for APT56M60B2 by Microchip Technology Inc
Results Overview of APT56M60B2 by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
APT56M60B2 Information
APT56M60B2 by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT56M60B2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6093
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Newark | Mosfet Mos8 600 V 56 A To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT56M60B2 RoHS: Compliant Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$11.9200 / $14.6900 | Buy Now |
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DISTI #
APT56M60B2-ND
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DigiKey | MOSFET N-CH 600V 60A TO247 Min Qty: 40 Lead time: 20 Weeks Container: Tube | Temporarily Out of Stock |
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$14.6900 | Buy Now |
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DISTI #
APT56M60B2
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Avnet Americas | Power MOS 8 MOSFET N-Channel 600V 60A 3-Pin TO-247 - Rail/Tube (Alt: APT56M60B2) RoHS: Not Compliant Min Qty: 40 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$11.1618 / $11.9250 | Buy Now |
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DISTI #
494-APT56M60B2
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Mouser Electronics | MOSFETs MOSFET MOS8 600 V 56 A TO-247 MAX RoHS: Compliant | 0 |
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$12.6800 / $14.6900 | Order Now |
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DISTI #
APT56M60B2
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Microchip Technology Inc | MOSFET MOS 8 600 V 56 A TO-247 MAX, T-MAX, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$11.2500 / $14.6900 | Buy Now |
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Onlinecomponents.com | MOSFET (Metal Oxide) Transistor - N-Channel - 600 V - 60A Continuous Drain (Id) @ 25°C - 130mOhm @ 28A, 10V - TO-247-3 Variant Package - Through Hole. RoHS: Compliant | 0 |
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$11.4300 / $14.2400 | Buy Now |
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DISTI #
APT56M60B2
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TME | Transistor: N-MOSFET, unipolar, 600V, 60A, 1040W, TO247 Min Qty: 1 | 0 |
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$21.5400 / $23.9800 | RFQ |
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NAC | FG, MOSFET, 600V, TO-247 T-MAX RoHS: Compliant Min Qty: 23 Package Multiple: 1 Container: Tube | 0 |
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$11.6300 / $14.0300 | Buy Now |
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DISTI #
APT56M60B2
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 40 | 0 |
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$12.6000 / $13.1000 | Buy Now |
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Master Electronics | MOSFET (Metal Oxide) Transistor - N-Channel - 600 V - 60A Continuous Drain (Id) @ 25°C - 130mOhm @ 28A, 10V - TO-247-3 Variant Package - Through Hole. RoHS: Compliant | 0 |
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$11.4300 / $14.2400 | Buy Now |
Part Details for APT56M60B2
APT56M60B2 CAD Models
APT56M60B2 Part Data Attributes
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APT56M60B2
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT56M60B2
Microchip Technology Inc
Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Additional Feature | FAST SWITCHING, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1580 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 210 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT56M60B2
This table gives cross-reference parts and alternative options found for APT56M60B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT56M60B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT56M60L | Microchip Technology Inc | $14.6496 | Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | APT56M60B2 vs APT56M60L |
| APT56F60L | Microchip Technology Inc | $15.6837 | Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | APT56M60B2 vs APT56F60L |
APT56M60B2 Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
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Although the datasheet specifies a recommended operating voltage range of 15V to 30V, the absolute maximum rating for the VCC pin is 40V. However, it's essential to ensure that the device operates within the recommended voltage range for reliable operation.
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To protect the APT56M60B2 from EOS, it's recommended to use a suitable TVS (transient voltage suppression) diode or a voltage clamp circuit to limit voltage transients and spikes. Additionally, ensure that the device is operated within the recommended voltage and current ratings.
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Microchip recommends using a gate drive circuit with a resistance of 10 ohms or less to ensure fast switching times and minimize ringing. A gate drive voltage of 10V to 15V is recommended for optimal performance.