Part Details for APT56M50L by Microsemi Corporation
Results Overview of APT56M50L by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT56M50L Information
APT56M50L by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT56M50L
APT56M50L CAD Models
APT56M50L Part Data Attributes
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APT56M50L
Microsemi Corporation
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Datasheet
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APT56M50L
Microsemi Corporation
Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-264AA | |
| Package Description | ROHS COMPLIANT, TO-264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 175 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT56M50L
This table gives cross-reference parts and alternative options found for APT56M50L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT56M50L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| APT56M50L | Microchip Technology Inc | $10.7212 | Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | APT56M50L vs APT56M50L |
APT56M50L Frequently Asked Questions (FAQ)
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Microsemi recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a thermal relief pattern.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
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Microsemi recommends using a gate drive circuit with a high current capability (e.g., 1A to 2A) and a low output impedance to ensure fast switching times. A bootstrap circuit or a dedicated gate driver IC can be used to provide the necessary gate drive voltage.
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To protect the device from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode on the input pins. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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To protect the device from electrostatic discharge (ESD), follow proper handling and storage procedures. Implement ESD protection measures such as using ESD-sensitive device handlers, wrist straps, and mats. Additionally, consider using ESD protection diodes or devices on the input pins.