Part Details for APT50M50JLL by Microsemi Corporation
Results Overview of APT50M50JLL by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
APT50M50JLL Information
APT50M50JLL by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT50M50JLL
APT50M50JLL CAD Models
APT50M50JLL Part Data Attributes
|
|
APT50M50JLL
Microsemi Corporation
Buy Now
Datasheet
|
Compare Parts:
APT50M50JLL
Microsemi Corporation
Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | ISOTOP | |
| Package Description | ISOTOP-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 3200 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 71 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 595 W | |
| Pulsed Drain Current-Max (IDM) | 284 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT50M50JLL
This table gives cross-reference parts and alternative options found for APT50M50JLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50M50JLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT50M50JFLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT50M50JLL vs APT50M50JFLL |
APT50M50JLL Frequently Asked Questions (FAQ)
-
Microsemi recommends a 2-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
-
To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the junction temperature below 150°C.
-
The maximum allowed voltage transient on the input pins is ±500 mV, with a duration of less than 100 ns. Exceeding this limit may cause damage to the device.
-
Yes, the APT50M50JLL can be used in a parallel configuration to increase power handling. However, it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.
-
Microsemi recommends using a TVS (Transient Voltage Suppressor) diode with a minimum standoff voltage of 50 V and a maximum clamping voltage of 70 V to protect the APT50M50JLL from ESD events.