Datasheets
APT50M50JFLL by:

Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT50M50JFLL by Microchip Technology Inc

Results Overview of APT50M50JFLL by Microchip Technology Inc

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

APT50M50JFLL Information

APT50M50JFLL by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT50M50JFLL

Part # Distributor Description Stock Price Buy
DISTI # 78AH6014
Newark Fredfet Mos7 500 V 50 Mohm Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT50M50JFLL RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $65.0900
  • 100 $56.2100
  • 250 $54.1000
  • 500 $52.8400
$52.8400 / $65.0900 Buy Now
DISTI # APT50M50JFLL
Avnet Americas Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 - Rail/Tube (Alt: APT50M50JFLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 10 $54.5174
  • 20 $51.9985
  • 30 $51.1555
  • 50 $50.3094
  • 100 $49.4676
$49.4676 / $54.5174 Buy Now
DISTI # 494-APT50M50JFLL
Mouser Electronics MOSFET Modules FREDFET MOS7 500 V 50 mOhm SOT-227 RoHS: Compliant 10
  • 1 $65.0900
  • 100 $56.2100
$56.2100 / $65.0900 Buy Now
DISTI # APT50M50JFLL
Microchip Technology Inc FREDFET MOS 7 500 V 50 mOhm SOT-227, SOT-227, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $65.0900
  • 100 $56.2100
  • 250 $54.1000
  • 500 $52.8400
  • 1,000 $51.5700
  • 5,000 $49.8700
$49.8700 / $65.0900 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 88A Continuous Drain (Id) @ 25°C - 50m Ohm @ 44A, 10V - SOT-227-4 Package - Chassis Mount. RoHS: Compliant 0
  • 1 $62.1800
  • 5 $57.1400
  • 10 $55.6300
  • 25 $52.2000
  • 50 $51.4100
$51.4100 / $62.1800 Buy Now
DISTI # APT50M50JFLL
TME Module, single transistor, 500V, 71A, ISOTOP, screw, Idm: 284A, 595W Min Qty: 1 0
  • 1 $94.1300
  • 3 $84.7100
  • 10 $74.8500
$74.8500 / $94.1300 RFQ
NAC FG, FREDFET, 500V, 0.05_OHM, SOT-227 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Container: Tube 0
  • 1 $60.4000
  • 100 $55.6300
  • 500 $52.8500
  • 800 $51.5600
$51.5600 / $60.4000 Buy Now
DISTI # APT50M50JFLL
Richardson RFPD POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 10 0
  • 10 $58.0600
  • 50 $56.5600
  • 100 $55.8400
$55.8400 / $58.0600 Buy Now
DISTI # APT50M50JFLL
Avnet Silica Trans MOSFET NCH 500V 71A 4Pin SOT227 (Alt: APT50M50JFLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT50M50JFLL
EBV Elektronik Trans MOSFET NCH 500V 71A 4Pin SOT227 (Alt: APT50M50JFLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 88A Continuous Drain (Id) @ 25°C - 50m Ohm @ 44A, 10V - SOT-227-4 Package - Chassis Mount. RoHS: Compliant 0
  • 1 $62.1800
  • 5 $57.1400
  • 10 $55.6300
  • 25 $52.2000
  • 50 $51.4100
$51.4100 / $62.1800 Buy Now

Part Details for APT50M50JFLL

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APT50M50JFLL Part Data Attributes

APT50M50JFLL Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT50M50JFLL Microchip Technology Inc Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 3200 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 71 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
JESD-609 Code e1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 595 W
Pulsed Drain Current-Max (IDM) 284 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT50M50JFLL

This table gives cross-reference parts and alternative options found for APT50M50JFLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50M50JFLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT50M50JFLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 APT50M50JFLL vs APT50M50JFLL
APT50M50JLC Advanced Power Technology Check for Price Power Field-Effect Transistor, 77A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 APT50M50JFLL vs APT50M50JLC
APT50M50JFLC Microsemi Corporation Check for Price 77A, 500V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 APT50M50JFLL vs APT50M50JFLC
APT50M50JLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 APT50M50JFLL vs APT50M50JLL
APT50M50PVR Advanced Power Technology Check for Price Power Field-Effect Transistor, 74.5A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOLATED PPACK-4 APT50M50JFLL vs APT50M50PVR
IXFL100N50P Littelfuse Inc Check for Price Power Field-Effect Transistor, 70A I(D), 500V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN APT50M50JFLL vs IXFL100N50P

APT50M50JFLL Related Parts

APT50M50JFLL Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to dissipate heat, and ensure good airflow around the device. Also, follow proper PCB design and layout guidelines to minimize thermal resistance.

  • A gate drive circuit with a low impedance output stage and a high current capability is recommended. The gate drive voltage should be between 10V to 15V, and the gate resistance should be less than 10 ohms. A bootstrap capacitor can be used to provide a high voltage gate drive.

  • Use a voltage regulator or a TVS diode to protect the device from overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, ensure that the device is operated within the recommended voltage and current ratings.

  • The recommended dead time for the APT50M50JFLL is typically around 100-200 ns, depending on the specific application and switching frequency. However, the optimal dead time may vary depending on the specific design requirements and operating conditions.

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