Part Details for APT50M50JFLL by Microchip Technology Inc
Results Overview of APT50M50JFLL by Microchip Technology Inc
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT50M50JFLL Information
APT50M50JFLL by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT50M50JFLL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6014
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Newark | Fredfet Mos7 500 V 50 Mohm Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT50M50JFLL RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$52.8400 / $65.0900 | Buy Now |
DISTI #
APT50M50JFLL
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Avnet Americas | Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 - Rail/Tube (Alt: APT50M50JFLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$49.4676 / $54.5174 | Buy Now |
DISTI #
494-APT50M50JFLL
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Mouser Electronics | MOSFET Modules FREDFET MOS7 500 V 50 mOhm SOT-227 RoHS: Compliant | 10 |
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$56.2100 / $65.0900 | Buy Now |
DISTI #
APT50M50JFLL
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Microchip Technology Inc | FREDFET MOS 7 500 V 50 mOhm SOT-227, SOT-227, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$49.8700 / $65.0900 | Buy Now |
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Onlinecomponents.com | MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 88A Continuous Drain (Id) @ 25°C - 50m Ohm @ 44A, 10V - SOT-227-4 Package - Chassis Mount. RoHS: Compliant | 0 |
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$51.4100 / $62.1800 | Buy Now |
DISTI #
APT50M50JFLL
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TME | Module, single transistor, 500V, 71A, ISOTOP, screw, Idm: 284A, 595W Min Qty: 1 | 0 |
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$74.8500 / $94.1300 | RFQ |
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NAC | FG, FREDFET, 500V, 0.05_OHM, SOT-227 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Container: Tube | 0 |
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$51.5600 / $60.4000 | Buy Now |
DISTI #
APT50M50JFLL
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Richardson RFPD | POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 10 | 0 |
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$55.8400 / $58.0600 | Buy Now |
DISTI #
APT50M50JFLL
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Avnet Silica | Trans MOSFET NCH 500V 71A 4Pin SOT227 (Alt: APT50M50JFLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 28 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
APT50M50JFLL
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EBV Elektronik | Trans MOSFET NCH 500V 71A 4Pin SOT227 (Alt: APT50M50JFLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for APT50M50JFLL
APT50M50JFLL CAD Models
APT50M50JFLL Part Data Attributes
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APT50M50JFLL
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT50M50JFLL
Microchip Technology Inc
Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Avalanche Energy Rating (Eas) | 3200 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 71 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 595 W | |
Pulsed Drain Current-Max (IDM) | 284 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APT50M50JFLL
This table gives cross-reference parts and alternative options found for APT50M50JFLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50M50JFLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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APT50M50JFLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT50M50JFLL vs APT50M50JFLL |
APT50M50JLC | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 77A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT50M50JFLL vs APT50M50JLC |
APT50M50JFLC | Microsemi Corporation | Check for Price | 77A, 500V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | APT50M50JFLL vs APT50M50JFLC |
APT50M50JLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT50M50JFLL vs APT50M50JLL |
APT50M50PVR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 74.5A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOLATED PPACK-4 | APT50M50JFLL vs APT50M50PVR |
IXFL100N50P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 70A I(D), 500V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN | APT50M50JFLL vs IXFL100N50P |
APT50M50JFLL Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to dissipate heat, and ensure good airflow around the device. Also, follow proper PCB design and layout guidelines to minimize thermal resistance.
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A gate drive circuit with a low impedance output stage and a high current capability is recommended. The gate drive voltage should be between 10V to 15V, and the gate resistance should be less than 10 ohms. A bootstrap capacitor can be used to provide a high voltage gate drive.
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Use a voltage regulator or a TVS diode to protect the device from overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, ensure that the device is operated within the recommended voltage and current ratings.
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The recommended dead time for the APT50M50JFLL is typically around 100-200 ns, depending on the specific application and switching frequency. However, the optimal dead time may vary depending on the specific design requirements and operating conditions.