Part Details for APT50M38JFLL by Microchip Technology Inc
Results Overview of APT50M38JFLL by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
APT50M38JFLL Information
APT50M38JFLL by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT50M38JFLL
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
78AH6012
|
Newark | Fg, Fredfet, 500V, 0.03_Ohm, Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT50M38JFLL RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$74.2600 / $91.5000 | Buy Now |
DISTI #
APT50M38JFLL-ND
|
DigiKey | MOSFET N-CH 500V 88A ISOTOP Min Qty: 1 Lead time: 26 Weeks Container: Tube | Temporarily Out of Stock |
|
$74.2625 / $91.5000 | Buy Now |
DISTI #
APT50M38JFLL
|
Avnet Americas | Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 - Rail/Tube (Alt: APT50M38JFLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
|
$71.2920 / $74.8916 | Buy Now |
DISTI #
494-APT50M38JFLL
|
Mouser Electronics | MOSFET Modules FG, FREDFET, 500V, 0.03_OHM, SOT-227 RoHS: Compliant | 0 |
|
$79.0200 / $91.5000 | Order Now |
DISTI #
APT50M38JFLL
|
Microchip Technology Inc | FREDFET MOS 7 500 V 38 mOhm SOT-227, SOT-227, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube |
0 Alternates Available |
|
$70.1100 / $91.5000 | Buy Now |
|
Onlinecomponents.com | MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 88A Continuous Drain (Id) @ 25°C - 38m Ohm @ 44A, 10V - SOT-227-4 Package - Chassis Mount. RoHS: Compliant | Alternative Product Available |
|
$76.4200 / $99.0200 | Buy Now |
DISTI #
APT50M38JFLL
|
TME | Module, single transistor, 500V, 88A, ISOTOP, screw, Idm: 352A, 694W Min Qty: 1 | 0 |
|
$105.1800 / $132.2600 | RFQ |
|
NAC | FG, FREDFET, 500V, 0.03_OHM, SOT-227 RoHS: Compliant Min Qty: 4 Package Multiple: 1 Container: Tube | 0 |
|
$72.4500 / $84.8700 | Buy Now |
DISTI #
APT50M38JFLL
|
Richardson RFPD | POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 10 | 0 |
|
$78.4600 / $81.5900 | Buy Now |
|
Master Electronics | MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 88A Continuous Drain (Id) @ 25°C - 38m Ohm @ 44A, 10V - SOT-227-4 Package - Chassis Mount. RoHS: Compliant | Alternative Product Available |
|
$76.4200 / $99.0200 | Buy Now |
Part Details for APT50M38JFLL
APT50M38JFLL CAD Models
APT50M38JFLL Part Data Attributes
|
APT50M38JFLL
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
APT50M38JFLL
Microchip Technology Inc
Power Field-Effect Transistor, 88A I(D), 500V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | Microchip | |
Avalanche Energy Rating (Eas) | 3600 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 88 A | |
Drain-source On Resistance-Max | 0.038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 735 W | |
Pulsed Drain Current-Max (IDM) | 352 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APT50M38JFLL
This table gives cross-reference parts and alternative options found for APT50M38JFLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50M38JFLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
APT50M38JFLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 88A I(D), 500V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT50M38JFLL vs APT50M38JFLL |
IXFE80N50 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 72A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | APT50M38JFLL vs IXFE80N50 |
APT50M38JFLL Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
-
Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using thermal protection devices or thermal sensors to monitor temperature.
-
Use a multi-layer PCB with a solid ground plane, and ensure that high-frequency signals are routed away from sensitive analog circuits. Also, consider using EMI filters, shielding, and grounding techniques to minimize radiation.
-
Use the device's power-saving features, such as the low-power mode, and optimize the system's clock frequency and voltage supply. Also, consider using power gating and dynamic voltage scaling techniques.
-
Use 0.1uF to 1uF decoupling capacitors placed close to the device's power pins, and consider using a 10uF to 22uF bulk capacitor for additional filtering.