Part Details for APT50GN60BDQ2G by Microsemi Corporation
Results Overview of APT50GN60BDQ2G by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT50GN60BDQ2G Information
APT50GN60BDQ2G by Microsemi Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT50GN60BDQ2G
APT50GN60BDQ2G CAD Models
APT50GN60BDQ2G Part Data Attributes
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APT50GN60BDQ2G
Microsemi Corporation
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Datasheet
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APT50GN60BDQ2G
Microsemi Corporation
Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-247AD | |
| Package Description | ROHS COMPLIANT, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 107 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 366 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 400 ns | |
| Turn-on Time-Nom (ton) | 45 ns |
Alternate Parts for APT50GN60BDQ2G
This table gives cross-reference parts and alternative options found for APT50GN60BDQ2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50GN60BDQ2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| APT50GN60BDQ2G | Microchip Technology Inc | $7.4570 | Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD | APT50GN60BDQ2G vs APT50GN60BDQ2G |
APT50GN60BDQ2G Frequently Asked Questions (FAQ)
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Microsemi recommends a 2-layer or 4-layer PCB with a thermal pad connected to a heat sink or a thermal vias to dissipate heat. A minimum of 2 oz copper thickness is recommended for the PCB. Additionally, a thermal interface material (TIM) with a thermal conductivity of 1 W/m-K or higher is recommended between the device and the heat sink.
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The APT50GN60BDQ2G requires a gate driver with a voltage range of 10-15 V and a current capability of 2-3 A. The device should be biased with a Vgs of 10-12 V and a Vds of 50-60 V. Additionally, the device requires a bootstrap capacitor and a gate resistor to ensure proper switching.
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Microsemi recommends using a dedicated gate driver IC such as the Microsemi LX5262 or a similar device. The gate drive circuit should include a bootstrap capacitor (e.g., 100 nF) and a gate resistor (e.g., 10-20 ohms) to ensure proper switching and to prevent oscillations.
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The APT50GN60BDQ2G has an internal overvoltage protection (OVP) circuit that triggers at 65 V. However, it is recommended to add external overvoltage protection using a TVS diode or a zener diode to protect the device from voltage transients. Additionally, a current sense resistor and a fuse can be used to detect and prevent overcurrent conditions.
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The thermal derating curves for the APT50GN60BDQ2G can be found in the Microsemi application note AN-2013-01-01. The curves provide guidance on reducing the maximum power dissipation as a function of ambient temperature to ensure reliable operation.