Part Details for APT50GF120LRG by Microchip Technology Inc
Results Overview of APT50GF120LRG by Microchip Technology Inc
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
APT50GF120LRG Information
APT50GF120LRG by Microchip Technology Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT50GF120LRG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5990
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Newark | Igbt Npt Low Frequency Single 1200 V 50 A To-264 3 To-264 Tube Rohs Compliant: Yes |Microchip APT50GF120LRG RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$17.6500 / $21.7100 | Buy Now |
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DISTI #
APT50GF120LRG-ND
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DigiKey | IGBT NPT 1200V 135A TO264 Min Qty: 1 Lead time: 26 Weeks Container: Tube | Temporarily Out of Stock |
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$17.6375 / $21.7100 | Buy Now |
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DISTI #
APT50GF120LRG
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Avnet Americas | Transistor Fast IGBT N-Channel 1200V 135A 3-Pin TO-264 - Rail/Tube (Alt: APT50GF120LRG) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$16.5087 / $17.6375 | Buy Now |
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DISTI #
494-APT50GF120LRG
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Mouser Electronics | IGBTs IGBT NPT Low Frequency Single 1200 V 50 A TO-264 RoHS: Compliant | 0 |
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$18.7600 / $21.7100 | Order Now |
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DISTI #
APT50GF120LRG
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Microchip Technology Inc | IGBT NPT Low Frequency Single 1200 V 50 A TO-264, TO-264, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$16.6500 / $21.7100 | Buy Now |
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Onlinecomponents.com | Trans IGBT Chip N-CH 1200V 135A 781000mW 3-Pin(3+Tab) TO-264 Tube RoHS: Compliant | 217 Factory Stock |
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$16.9000 / $20.7500 | Buy Now |
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DISTI #
APT50GF120LRG
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TME | Transistor: IGBT, NPT, 1.2kV, 75A, 781W, TO264 Min Qty: 1 | 0 |
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$24.9900 / $31.4200 | RFQ |
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NAC | FG, IGBT, 1200V, 50A, TO-264, RoHS RoHS: Compliant Min Qty: 17 Package Multiple: 1 Container: Tube | 0 |
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$17.2100 / $20.1600 | Buy Now |
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DISTI #
APT50GF120LRG
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 30 | 0 |
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$18.6300 / $19.3700 | Buy Now |
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DISTI #
APT50GF120LRG
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EBV Elektronik | Transistor Fast IGBT NChannel 1200V 135A 3Pin TO264 (Alt: APT50GF120LRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for APT50GF120LRG
APT50GF120LRG CAD Models
APT50GF120LRG Part Data Attributes
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APT50GF120LRG
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT50GF120LRG
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, TO-264AA
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 156 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 781 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 520 ns | |
| Turn-on Time-Nom (ton) | 106 ns |
Alternate Parts for APT50GF120LRG
This table gives cross-reference parts and alternative options found for APT50GF120LRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50GF120LRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT50GF120B2RG | Microchip Technology Inc | $21.4430 | Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel | APT50GF120LRG vs APT50GF120B2RG |
| IXSN80N60BD1 | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4 | APT50GF120LRG vs IXSN80N60BD1 |
| IXER60N120 | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 95A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | APT50GF120LRG vs IXER60N120 |
| IXSX80N60B | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN | APT50GF120LRG vs IXSX80N60B |
| IXGR50N60B | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | APT50GF120LRG vs IXGR50N60B |
| APT60GT60BRG | Microchip Technology Inc | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247 | APT50GF120LRG vs APT60GT60BRG |
| APT60GT60BR | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | APT50GF120LRG vs APT60GT60BR |
| APT50GF120B2RG | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN | APT50GF120LRG vs APT50GF120B2RG |
APT50GF120LRG Frequently Asked Questions (FAQ)
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Microchip recommends a thermal pad layout with a minimum of 2 oz copper thickness, and a thermal via array with a minimum of 10 vias under the package to ensure optimal thermal performance.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure proper airflow. Additionally, consider derating the device's power dissipation and voltage ratings according to the temperature derating curves provided in the datasheet.
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When selecting a heat sink, consider the device's power dissipation, thermal resistance, and maximum junction temperature. Ensure the heat sink's thermal resistance is lower than the device's thermal resistance, and its maximum temperature rating is higher than the device's maximum junction temperature.
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To protect the device from EOS and ESD, use proper handling and storage procedures, ensure a safe and controlled environment during assembly, and implement ESD protection circuits and devices in the system design.
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Microchip recommends following the JEDEC J-STD-020D.1 standard for soldering and rework conditions, with a peak temperature of 260°C and a dwell time of 30 seconds.