Datasheets
APT5024BVFRG by:

Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Details for APT5024BVFRG by Microchip Technology Inc

Results Overview of APT5024BVFRG by Microchip Technology Inc

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APT5024BVFRG Information

APT5024BVFRG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT5024BVFRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6075
Newark Fredfet Mos5 500 V 24 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT5024BVFRG RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $25.4000
  • 100 $21.9200
  • 250 $21.1000
  • 500 $20.6100
$20.6100 / $25.4000 Buy Now
DISTI # APT5024BVFRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 500V, 22A, Idm: 88A Min Qty: 1 0
  • 1 $36.6900
  • 3 $33.0200
  • 10 $29.1800
$29.1800 / $36.6900 RFQ
NAC   RoHS: Compliant Min Qty: 15 Package Multiple: 1 0
RFQ

Part Details for APT5024BVFRG

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APT5024BVFRG Part Data Attributes

APT5024BVFRG Microchip Technology Inc
Buy Now Datasheet
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APT5024BVFRG Microchip Technology Inc Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-247, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 32 Weeks
Additional Feature AVALANCHE RATED, FAST SWITCHING
Avalanche Energy Rating (Eas) 1210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.24 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT5024BVFRG

This table gives cross-reference parts and alternative options found for APT5024BVFRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5024BVFRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT5024SVRG Microchip Technology Inc $23.6216 Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT5024BVFRG vs APT5024SVRG
IRFP22N50APBF Vishay Intertechnologies $3.3210 Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3 APT5024BVFRG vs IRFP22N50APBF
IRFP22N50APBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE, PLASTIC PACKAGE-3 APT5024BVFRG vs IRFP22N50APBF
APT5024SVRG Microsemi Corporation Check for Price Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT5024BVFRG vs APT5024SVRG
IRFP22N50A Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, APT5024BVFRG vs IRFP22N50A

APT5024BVFRG Related Parts

APT5024BVFRG Frequently Asked Questions (FAQ)

  • Microchip recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.

  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermistor or thermal monitoring IC to monitor the device temperature.

  • Although the datasheet specifies a maximum VIN of 5.5V, it's recommended to limit the voltage to 5V to ensure reliable operation and prevent damage to the internal voltage regulator.

  • Yes, but ensure the device is properly heat-sinked and the PCB is designed to handle high currents. Also, consider using a current sense resistor to monitor the current and prevent overheating.

  • Check the input voltage, ensure the enable pin is properly biased, and verify the correct configuration of the mode pins. Also, check for any short circuits or incorrect PCB layout.

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