Datasheets
APT5010JLLU2 by:

Power Field-Effect Transistor, 41A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT5010JLLU2 by Microchip Technology Inc

Results Overview of APT5010JLLU2 by Microchip Technology Inc

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

APT5010JLLU2 Information

APT5010JLLU2 by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT5010JLLU2

Part # Distributor Description Stock Price Buy
DISTI # 78AH6042
Newark Pm-Mosfet-7-Sot227 Isotop Sot-227 (J) Tube Rohs Compliant: Yes |Microchip APT5010JLLU2 RoHS: Compliant Min Qty: 34 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $25.0400
  • 50 $24.2100
  • 100 $23.3700
  • 250 $23.3700
  • 500 $23.3700
$23.3700 / $25.0400 Buy Now
DISTI # APT5010JLLU2-ND
DigiKey MOSFET N-CH 500V 41A SOT227 Min Qty: 1 Lead time: 20 Weeks Container: Bulk 28
In Stock
  • 1 $26.0900
$26.0900 Buy Now
DISTI # APT5010JLLU2
Avnet Americas Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 - Rail/Tube (Alt: APT5010JLLU2) RoHS: Compliant Min Qty: 34 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 34 $26.0875
  • 40 $25.6672
  • 70 $25.2511
  • 170 $24.8334
  • 340 $24.4179
$24.4179 / $26.0875 Buy Now
DISTI # 494-APT5010JLLU2
Mouser Electronics MOSFET Modules PM-MOSFET-7-SOT227 RoHS: Compliant 0
  • 34 $26.0800
$26.0800 Order Now
DISTI # APT5010JLLU2
Microchip Technology Inc CC0044, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days 0

Alternates Available
  • 1 $25.0400
  • 50 $24.2100
  • 100 $23.3700
  • 250 $22.5400
  • 500 $21.7000
  • 1,000 $20.8700
  • 5,000 $19.8300
$19.8300 / $25.0400 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 9 $39.4200
  • 17 $31.3000
  • 26 $28.6600
  • 34 $28.0800
$28.0800 / $39.4200 Buy Now
DISTI # APT5010JLLU2
TME Module, diode/transistor, 500V, 30A, ISOTOP, screw, Idm: 164A, 378W Min Qty: 1 0
  • 1 $44.2700
  • 3 $39.8500
  • 10 $35.2100
$35.2100 / $44.2700 RFQ
NAC CC0044 RoHS: Compliant Min Qty: 11 Package Multiple: 1 Container: Tube 0
  • 1 $29.8100
  • 100 $27.4600
  • 500 $26.0900
  • 800 $25.4500
$25.4500 / $29.8100 Buy Now
DISTI # APT5010JLLU2
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 34 0
  • 34 $27.4700
$27.4700 Buy Now
DISTI # APT5010JLLU2
Avnet Silica Trans MOSFET NCH 500V 41A 4Pin SOT227 (Alt: APT5010JLLU2) RoHS: Compliant Min Qty: 34 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT5010JLLU2
EBV Elektronik Trans MOSFET NCH 500V 41A 4Pin SOT227 (Alt: APT5010JLLU2) RoHS: Compliant Min Qty: 34 Package Multiple: 1 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 0
  • 9 $39.4200
  • 17 $31.3000
  • 26 $28.6600
  • 34 $28.0800
$28.0800 / $39.4200 Buy Now

Part Details for APT5010JLLU2

APT5010JLLU2 CAD Models

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APT5010JLLU2 Part Data Attributes

APT5010JLLU2 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT5010JLLU2 Microchip Technology Inc Power Field-Effect Transistor, 41A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description ROHS COMPLIANT, ISOTOP-4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1600 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 41 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 378 W
Pulsed Drain Current-Max (IDM) 164 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT5010JLLU2

This table gives cross-reference parts and alternative options found for APT5010JLLU2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5010JLLU2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT5010JLLU3 Microchip Technology Inc $28.2804 Power Field-Effect Transistor, 41A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT5010JLLU2 vs APT5010JLLU3
APT5010JVRU3 Microchip Technology Inc $32.4991 Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT5010JLLU2 vs APT5010JVRU3
APT5010JVRU2 Microchip Technology Inc $32.6014 Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT5010JLLU2 vs APT5010JVRU2
APT5010JVFR Microchip Technology Inc $41.3872 Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT5010JLLU2 vs APT5010JVFR
APT5010JFLC Advanced Power Technology Check for Price Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 APT5010JLLU2 vs APT5010JFLC
APT5010JLC Microsemi Corporation Check for Price 44A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 APT5010JLLU2 vs APT5010JLC
FQL40N50 onsemi Check for Price Power MOSFET, N-Channel, QFET®, 500 V, 40 A, 110 mΩ, TO-264, TO-264-3, 375-TUBE APT5010JLLU2 vs FQL40N50

APT5010JLLU2 Related Parts

APT5010JLLU2 Frequently Asked Questions (FAQ)

  • Microchip recommends a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer to improve thermal performance. Additionally, placing thermal vias under the package can help to dissipate heat more efficiently.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines. Also, consider using a heat sink or thermal interface material to reduce the junction temperature. Microchip provides a thermal model for the APT5010JLLU2, which can be used to simulate and optimize the thermal design.

  • The internal oscillator has a limited frequency range (1-20 MHz) and may not provide the required accuracy or stability for certain applications. If you need a higher frequency or better accuracy, it's recommended to use an external clock source. Additionally, if you're using the APT5010JLLU2 in a system with multiple clock domains, an external clock source can help to ensure synchronization and reduce jitter.

  • To configure the APT5010JLLU2 for low-power operation, you can use the Power Save Mode (PSM) feature, which reduces the power consumption by disabling unnecessary blocks and scaling down the clock frequency. You can also adjust the voltage regulator settings, use a lower clock frequency, and optimize the firmware to minimize power consumption.

  • To ensure EMI and ESD protection, follow proper PCB design guidelines, such as using a solid ground plane, minimizing trace lengths, and using shielding or filtering components. Additionally, consider using ESD protection devices, such as TVS diodes or ESD arrays, to protect the APT5010JLLU2 from electrostatic discharge events.

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