Datasheets
APT5010JFLL by:

Power Field-Effect Transistor, 41A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT5010JFLL by Microchip Technology Inc

Results Overview of APT5010JFLL by Microchip Technology Inc

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

APT5010JFLL Information

APT5010JFLL by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT5010JFLL

Part # Distributor Description Stock Price Buy
DISTI # 78AH6040
Newark Fredfet Mos7 500 V 10 Ohm Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT5010JFLL RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $40.2400
  • 100 $34.7500
  • 250 $33.4500
  • 500 $32.6700
$32.6700 / $40.2400 Buy Now
DISTI # APT5010JFLL
Avnet Americas Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 - Rail/Tube (Alt: APT5010JFLL) RoHS: Compliant Min Qty: 20 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 20 $33.6924
  • 30 $33.5205
  • 50 $33.3486
  • 100 $33.1767
  • 200 $30.5952
$30.5952 / $33.6924 Buy Now
DISTI # 494-APT5010JFLL
Mouser Electronics MOSFET Modules FREDFET MOS7 500 V 10 Ohm SOT-227 RoHS: Compliant 0
  • 1 $40.2400
  • 100 $34.7500
$34.7500 / $40.2400 Order Now
DISTI # APT5010JFLL
Microchip Technology Inc FREDFET MOS 7 500 V 100 mOhm SOT-227, SOT-227, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $40.2400
  • 100 $34.7500
  • 250 $33.4500
  • 500 $32.6700
  • 1,000 $31.9000
  • 5,000 $30.8200
$30.8200 / $40.2400 Buy Now
Onlinecomponents.com   RoHS: Compliant 50 In Stock
  • 1 $67.0700
  • 5 $47.3400
  • 10 $43.7400
  • 15 $42.8100
  • 20 $38.7100
$38.7100 / $67.0700 Buy Now
DISTI # 87988591
Verical Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2505 Americas - 50
  • 1 $84.1531
  • 5 $57.3818
  • 10 $52.1335
  • 15 $50.1876
  • 20 $45.3810
$45.3810 / $84.1531 Buy Now
DISTI # APT5010JFLL
TME Module, single transistor, 500V, 41A, ISOTOP, screw, Idm: 164A, 378W Min Qty: 1 0
  • 1 $58.1700
  • 3 $52.3600
  • 10 $46.2600
$46.2600 / $58.1700 RFQ
NAC FG, FREDFET, 500V, 0.10_OHM, SOT-227 RoHS: Compliant Min Qty: 9 Package Multiple: 1 Container: Tube 0
  • 1 $37.3300
  • 100 $34.3800
  • 500 $32.6600
  • 800 $31.8700
$31.8700 / $37.3300 Buy Now
DISTI # APT5010JFLL
Richardson RFPD POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 1 0
  • 1 $35.8900
  • 50 $34.9600
  • 100 $34.5100
$34.5100 / $35.8900 Buy Now
DISTI # APT5010JFLL
Avnet Silica Trans MOSFET NCH 500V 41A 4Pin SOT227 (Alt: APT5010JFLL) RoHS: Compliant Min Qty: 20 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT5010JFLL
EBV Elektronik Trans MOSFET NCH 500V 41A 4Pin SOT227 (Alt: APT5010JFLL) RoHS: Compliant Min Qty: 20 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 50 In Stock
  • 1 $67.0700
  • 5 $47.3400
  • 10 $43.7400
  • 15 $42.8100
  • 20 $38.7100
$38.7100 / $67.0700 Buy Now

Part Details for APT5010JFLL

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APT5010JFLL Part Data Attributes

APT5010JFLL Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT5010JFLL Microchip Technology Inc Power Field-Effect Transistor, 41A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 1600 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 41 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
JESD-609 Code e1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 446 W
Pulsed Drain Current-Max (IDM) 164 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT5010JFLL

This table gives cross-reference parts and alternative options found for APT5010JFLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5010JFLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT5010JFLC Advanced Power Technology Check for Price Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 APT5010JFLL vs APT5010JFLC

APT5010JFLL Related Parts

APT5010JFLL Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure that the thermal pad is connected to a large copper area to dissipate heat efficiently.

  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure that the device is operated within the recommended temperature range (–40°C to +125°C).

  • The critical timing parameters include the input rise and fall times (tr and tf), the output rise and fall times (tr(o) and tf(o)), and the propagation delay (tpd). Ensure that these parameters are within the recommended specifications.

  • Implement ESD protection using external components such as TVS diodes or ESD arrays. Ensure that the protection devices are rated for the maximum voltage and current of the application.

  • Use 0.1 μF to 1 μF decoupling capacitors placed as close as possible to the device's power pins. Ensure that the capacitors are rated for the maximum voltage of the application.

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