Datasheets
APT34M60S by:

Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT34M60S by Microchip Technology Inc

Results Overview of APT34M60S by Microchip Technology Inc

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Applications Energy and Power Systems Renewable Energy

APT34M60S Information

APT34M60S by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT34M60S

Part # Distributor Description Stock Price Buy
DISTI # 78AH5893
Newark Mosfet Mos8 600 V 34 A To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT34M60S RoHS: Compliant Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $12.4300
  • 100 $10.7400
  • 250 $10.3300
  • 500 $10.0900
$10.0900 / $12.4300 Buy Now
DISTI # 150-APT34M60S-ND
DigiKey MOSFET N-CH 600V 36A D3PAK Min Qty: 1 Lead time: 20 Weeks Container: Tube 46
In Stock
  • 1 $12.4300
  • 100 $10.7400
$10.7400 / $12.4300 Buy Now
DISTI # APT34M60S
Avnet Americas Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D3PAK - Rail/Tube (Alt: APT34M60S) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 40 $10.0875
  • 50 $9.9645
  • 90 $9.9134
  • 200 $9.6026
  • 400 $9.4419
$9.4419 / $10.0875 Buy Now
DISTI # 494-APT34M60S
Mouser Electronics MOSFETs MOSFET MOS8 600 V 34 A TO-268 RoHS: Compliant 0
  • 1 $12.4300
  • 100 $10.7400
$10.7400 / $12.4300 Order Now
DISTI # APT34M60S
Microchip Technology Inc MOSFET MOS 8 600 V 34 A TO-268, TO-268, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $12.4300
  • 100 $10.7400
  • 250 $10.3300
  • 500 $10.0900
  • 1,000 $9.8500
  • 5,000 $9.5200
$9.5200 / $12.4300 Buy Now
Onlinecomponents.com Trans MOSFET N-CH Si 600V 36A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant 215 Factory Stock
  • 5 $12.0400
  • 25 $10.9100
  • 50 $10.6200
  • 100 $10.2200
  • 250 $9.9600
  • 500 $9.8100
  • 1,000 $9.6700
$9.6700 / $12.0400 Buy Now
DISTI # APT34M60S
TME Transistor: N-MOSFET, unipolar, 600V, 23A, Idm: 124A, 624W, D3PAK Min Qty: 1 0
  • 1 $19.8600
  • 3 $17.7900
  • 10 $15.7200
$15.7200 / $19.8600 RFQ
NAC FG, MOOSFET, 600V, TO-268 RoHS: Compliant Min Qty: 28 Package Multiple: 1 Container: Tube 0
  • 1 $11.8700
  • 100 $10.7600
  • 500 $10.0900
  • 1,000 $9.8400
$9.8400 / $11.8700 Buy Now
Master Electronics Trans MOSFET N-CH Si 600V 36A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant 215 Factory Stock
  • 5 $12.0400
  • 25 $10.9100
  • 50 $10.6200
  • 100 $10.2200
  • 250 $9.9600
  • 500 $9.8100
  • 1,000 $9.6700
$9.6700 / $12.0400 Buy Now

Part Details for APT34M60S

APT34M60S CAD Models

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APT34M60S Part Data Attributes

APT34M60S Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT34M60S Microchip Technology Inc Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 930 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 624 W
Pulsed Drain Current-Max (IDM) 124 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT34M60S

This table gives cross-reference parts and alternative options found for APT34M60S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT34M60S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT34M60S Microsemi Corporation Check for Price Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3/2 APT34M60S vs APT34M60S
Part Number Manufacturer Composite Price Description Compare
APT34M60S/TR Microchip Technology Inc $13.5498 Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT34M60S vs APT34M60S/TR

APT34M60S Related Parts

APT34M60S Frequently Asked Questions (FAQ)

  • Microchip recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature (TJ) range of -40°C to 150°C.

  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage within the recommended operating range of 4.5V to 5.5V.

  • Implement ESD protection measures such as using ESD-sensitive handling procedures, ESD-protected workstations, and incorporating ESD protection devices (e.g., TVS diodes) in the circuit design.

  • The recommended power-up sequence is to apply the input voltage (VIN) first, followed by the enable signal (EN). This ensures proper device initialization and prevents unwanted behavior.

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