Part Details for APT34M60S by Microchip Technology Inc
Results Overview of APT34M60S by Microchip Technology Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
APT34M60S Information
APT34M60S by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT34M60S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5893
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Newark | Mosfet Mos8 600 V 34 A To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT34M60S RoHS: Compliant Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$10.0900 / $12.4300 | Buy Now |
DISTI #
150-APT34M60S-ND
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DigiKey | MOSFET N-CH 600V 36A D3PAK Min Qty: 1 Lead time: 20 Weeks Container: Tube |
46 In Stock |
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$10.7400 / $12.4300 | Buy Now |
DISTI #
APT34M60S
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Avnet Americas | Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D3PAK - Rail/Tube (Alt: APT34M60S) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$9.4419 / $10.0875 | Buy Now |
DISTI #
494-APT34M60S
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Mouser Electronics | MOSFETs MOSFET MOS8 600 V 34 A TO-268 RoHS: Compliant | 0 |
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$10.7400 / $12.4300 | Order Now |
DISTI #
APT34M60S
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Microchip Technology Inc | MOSFET MOS 8 600 V 34 A TO-268, TO-268, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$9.5200 / $12.4300 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH Si 600V 36A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant | 215 Factory Stock |
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$9.6700 / $12.0400 | Buy Now |
DISTI #
APT34M60S
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TME | Transistor: N-MOSFET, unipolar, 600V, 23A, Idm: 124A, 624W, D3PAK Min Qty: 1 | 0 |
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$15.7200 / $19.8600 | RFQ |
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NAC | FG, MOOSFET, 600V, TO-268 RoHS: Compliant Min Qty: 28 Package Multiple: 1 Container: Tube | 0 |
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$9.8400 / $11.8700 | Buy Now |
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Master Electronics | Trans MOSFET N-CH Si 600V 36A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant | 215 Factory Stock |
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$9.6700 / $12.0400 | Buy Now |
Part Details for APT34M60S
APT34M60S CAD Models
APT34M60S Part Data Attributes
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APT34M60S
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT34M60S
Microchip Technology Inc
Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 930 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 624 W | |
Pulsed Drain Current-Max (IDM) | 124 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APT34M60S
This table gives cross-reference parts and alternative options found for APT34M60S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT34M60S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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APT34M60S | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3/2 | APT34M60S vs APT34M60S |
APT34M60S Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.
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Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature (TJ) range of -40°C to 150°C.
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The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage within the recommended operating range of 4.5V to 5.5V.
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Implement ESD protection measures such as using ESD-sensitive handling procedures, ESD-protected workstations, and incorporating ESD protection devices (e.g., TVS diodes) in the circuit design.
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The recommended power-up sequence is to apply the input voltage (VIN) first, followed by the enable signal (EN). This ensures proper device initialization and prevents unwanted behavior.