Part Details for APT34F100B2 by Microchip Technology Inc
Results Overview of APT34F100B2 by Microchip Technology Inc
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
APT34F100B2 Information
APT34F100B2 by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT34F100B2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5886
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Newark | Fredfet Mos8 1000 V 34 A To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT34F100B2 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$17.3600 / $21.3900 | Buy Now |
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DISTI #
APT34F100B2-ND
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DigiKey | MOSFET N-CH 1000V 35A T-MAX Min Qty: 30 Lead time: 26 Weeks Container: Tube | Temporarily Out of Stock |
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$21.3900 | Buy Now |
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DISTI #
APT34F100B2
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Avnet Americas | Trans MOSFET N-CH 1KV 35A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT34F100B2) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$16.2513 / $17.3625 | Buy Now |
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DISTI #
494-APT34F100B2
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Mouser Electronics | MOSFETs FREDFET MOS8 1000 V 34 A TO-247 MAX RoHS: Compliant | 0 |
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$18.4700 / $21.3900 | Order Now |
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DISTI #
APT34F100B2
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Microchip Technology Inc | FREDFET MOS 8 1000 V 34 A TO-247 MAX, T-MAX, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$16.3900 / $21.3900 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH Si 1KV 35A 3-Pin(3+Tab) T-MAX Tube RoHS: Compliant | 325 Factory Stock |
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$16.6400 / $20.4300 | Buy Now |
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DISTI #
APT34F100B2
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TME | Transistor: N-MOSFET, unipolar, 1kV, 21A, Idm: 140A, 1135W, TO247MAX Min Qty: 1 | 0 |
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$27.0300 / $33.9800 | RFQ |
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NAC | FG, FREDFET, 1000V, TO-247 T-MAX, RoHS RoHS: Compliant Min Qty: 16 Package Multiple: 1 Container: Tube | 0 |
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$16.9400 / $19.8400 | Buy Now |
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DISTI #
APT34F100B2
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Richardson RFPD | POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 13 |
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$18.3400 / $19.0800 | Buy Now |
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DISTI #
APT34F100B2
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Avnet Silica | Trans MOSFET NCH 1KV 35A 3Pin3Tab TMAX (Alt: APT34F100B2) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 28 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for APT34F100B2
APT34F100B2 CAD Models
APT34F100B2 Part Data Attributes
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APT34F100B2
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT34F100B2
Microchip Technology Inc
Power Field-Effect Transistor, 35A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 2165 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT34F100B2
This table gives cross-reference parts and alternative options found for APT34F100B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT34F100B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFX32N100P | IXYS Corporation | $10.6563 | Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | APT34F100B2 vs IXFX32N100P |
| IXFX32N90P | IXYS Corporation | $11.0682 | Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | APT34F100B2 vs IXFX32N90P |
| IXFK32N100P | IXYS Corporation | $11.7588 | Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | APT34F100B2 vs IXFK32N100P |
| IXFK32N90P | IXYS Corporation | $21.2087 | Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | APT34F100B2 vs IXFK32N90P |
| APT34F100L | Microchip Technology Inc | $21.6938 | Power Field-Effect Transistor, 35A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | APT34F100B2 vs APT34F100L |
| IXFX32N100Q3 | IXYS Corporation | $24.0805 | Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | APT34F100B2 vs IXFX32N100Q3 |
| APT34F100B2 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT, T-MAX, 3 PIN | APT34F100B2 vs APT34F100B2 |
| APT34F100L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN | APT34F100B2 vs APT34F100L |
| APT31M100B2 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 | APT34F100B2 vs APT31M100B2 |
| APT29F100L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN | APT34F100B2 vs APT29F100L |
APT34F100B2 Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer to improve thermal performance. Additionally, placing thermal vias under the package can help to dissipate heat more efficiently.
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To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines. This includes providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device. Additionally, consider using a thermal sensor to monitor the device temperature and implement thermal protection mechanisms.
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The internal oscillator has a limited frequency range and accuracy. If your application requires a higher frequency or tighter frequency tolerance, it's recommended to use an external clock source. Additionally, if you need to synchronize multiple devices or require a specific clock frequency, an external clock source is a better option.
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Power sequencing and voltage monitoring can be implemented using external components such as voltage supervisors, power sequencers, and voltage monitors. These components can be connected to the APT34F100B2's power pins to ensure proper power-up and power-down sequencing, as well as monitoring of voltage levels.
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To ensure EMI and ESD protection, follow best practices such as using a ground plane, decoupling capacitors, and EMI filters. Additionally, consider using ESD protection devices, such as TVS diodes, and follow proper PCB layout guidelines to minimize EMI radiation.