Part Details for APT20M120JCU3 by Microchip Technology Inc
Results Overview of APT20M120JCU3 by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
APT20M120JCU3 Information
APT20M120JCU3 by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT20M120JCU3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5737
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Newark | Pm-Mosfet-8-Sbd-Sot227 Isotop Sot-227 (J) Tube Rohs Compliant: Yes |Microchip APT20M120JCU3 RoHS: Compliant Min Qty: 25 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$31.1800 / $33.4100 | Buy Now |
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DISTI #
APT20M120JCU3-ND
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DigiKey | MOSFET N-CH 1200V 20A SOT227 Min Qty: 25 Lead time: 20 Weeks Container: Bulk | Temporarily Out of Stock |
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$34.8000 | Buy Now |
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DISTI #
APT20M120JCU3
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Avnet Americas | Trans MOSFET N-CH 1.2KV 20A 4-Pin SOT-227 - Rail/Tube (Alt: APT20M120JCU3) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$32.5728 / $34.8000 | Buy Now |
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DISTI #
494-APT20M120JCU3
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Mouser Electronics | Discrete Semiconductor Modules PM-MOSFET-8-SBD-SOT227 RoHS: Compliant | 0 |
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$34.8000 | Order Now |
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DISTI #
APT20M120JCU3
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Microchip Technology Inc | DOR CC0010, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days |
0 Alternates Available |
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$26.4500 / $33.4100 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$37.6900 / $49.7100 | Buy Now |
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DISTI #
APT20M120JCU3
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TME | Module, diode/transistor, 200V, 15A, ISOTOP, screw, Idm: 104A, 543W Min Qty: 1 | 0 |
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$46.9500 / $59.0400 | RFQ |
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NAC | DOR CC0010 RoHS: Compliant Min Qty: 8 Package Multiple: 1 Container: Tube | 0 |
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$33.9500 / $39.7700 | Buy Now |
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DISTI #
APT20M120JCU3
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Richardson RFPD | SILICON CARBIDE/SILICON HYBRID MODULES RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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Master Electronics | RoHS: Compliant | 0 |
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$37.6900 / $49.7100 | Buy Now |
Part Details for APT20M120JCU3
APT20M120JCU3 CAD Models
APT20M120JCU3 Part Data Attributes
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APT20M120JCU3
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT20M120JCU3
Microchip Technology Inc
Power Field-Effect Transistor, 20A I(D), 1200V, 0.672ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, ISOTOP-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.672 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 543 W | |
| Pulsed Drain Current-Max (IDM) | 104 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT20M120JCU3
This table gives cross-reference parts and alternative options found for APT20M120JCU3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT20M120JCU3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFK48N60Q3 | IXYS Corporation | $13.1380 | Power Field-Effect Transistor, 48A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | APT20M120JCU3 vs IXFK48N60Q3 |
| IXFK48N60P | IXYS Corporation | $13.3400 | Power Field-Effect Transistor, 48A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | APT20M120JCU3 vs IXFK48N60P |
| IXFK48N60Q3 | Littelfuse Inc | $22.7700 | Power Field-Effect Transistor, | APT20M120JCU3 vs IXFK48N60Q3 |
| IXFN20N120 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 20A I(D), 1200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT20M120JCU3 vs IXFN20N120 |
| APT20M120JCU3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 1200V, 0.672ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 | APT20M120JCU3 vs APT20M120JCU3 |
| IXFN20N120 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 1200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT20M120JCU3 vs IXFN20N120 |
APT20M120JCU3 Frequently Asked Questions (FAQ)
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Microchip provides a recommended PCB layout in the device's application note (DS00003584A) and thermal design guide (DS20005248A). It's essential to follow these guidelines to ensure optimal thermal performance and prevent overheating.
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When selecting a gate driver for the APT20M120JCU3, consider the driver's output current, voltage rating, and rise/fall times. Ensure the driver can provide a sufficient voltage swing to fully turn on the MOSFET. Microchip recommends using a gate driver with a high current capability (e.g., MIC4420 or MIC4422) to minimize switching losses.
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The maximum allowed voltage for the gate-source voltage (VGS) is ±20V. Exceeding this voltage can damage the MOSFET. It's essential to ensure the gate driver's output voltage is within this range to prevent damage.
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The APT20M120JCU3 has an integrated body diode, which can conduct during switching. To minimize losses, use a fast-switching diode (e.g., 1N4937) in parallel with the MOSFET to provide a low-impedance path for the diode current. This helps reduce the voltage spike during turn-off and minimizes electromagnetic interference (EMI).
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The APT20M120JCU3 is suitable for high-frequency switching applications up to 1 MHz. However, the optimal operating frequency range depends on the specific application, PCB layout, and thermal management. It's essential to evaluate the MOSFET's performance and thermal behavior at the desired frequency to ensure reliable operation.