Datasheets
APT19F100J by:

Power Field-Effect Transistor, 20A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT19F100J by Microchip Technology Inc

Results Overview of APT19F100J by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

APT19F100J Information

APT19F100J by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT19F100J

Part # Distributor Description Stock Price Buy
DISTI # 78AH5671
Newark Fredfet Mos8 1000 V 19 A Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT19F100J RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $28.7800
  • 100 $24.8600
  • 250 $23.9200
  • 500 $23.3600
$23.3600 / $28.7800 Buy Now
DISTI # APT19F100J-ND
DigiKey MOSFET N-CH 1000V 20A ISOTOP Min Qty: 20 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 20 $28.7800
$28.7800 Buy Now
DISTI # APT19F100J
Avnet Americas Power MOS 8 FREDFET N-Channel 1000V 20A SOT-227 - Rail/Tube (Alt: APT19F100J) RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 20 $23.3625
  • 30 $22.9861
  • 50 $22.6134
  • 100 $22.2626
  • 200 $21.8673
$21.8673 / $23.3625 Buy Now
DISTI # 494-APT19F100J
Mouser Electronics MOSFET Modules FREDFET MOS8 1000 V 19 A SOT-227 RoHS: Compliant 0
  • 1 $28.7800
  • 100 $24.8600
$24.8600 / $28.7800 Order Now
DISTI # APT19F100J
Microchip Technology Inc FREDFET MOS 8 1000 V 19 A SOT-227, SOT-227, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $28.7800
  • 100 $24.8600
  • 250 $23.9200
  • 500 $23.3600
  • 1,000 $22.8000
  • 5,000 $22.0600
$22.0600 / $28.7800 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 1 $27.4900
  • 5 $26.3200
  • 25 $24.5900
  • 50 $23.6600
  • 100 $23.0700
  • 250 $22.7300
  • 500 $22.3900
$22.3900 / $27.4900 Buy Now
DISTI # APT19F100J
TME Module, single transistor, 1kV, 13A, ISOTOP, screw, Idm: 120A, 460W Min Qty: 1 0
  • 1 $45.7400
  • 3 $41.1700
  • 10 $36.3800
$36.3800 / $45.7400 RFQ
NAC FG, FREDFET, 1000V, SOT-227 RoHS: Compliant Min Qty: 12 Package Multiple: 1 Container: Tube 0
  • 1 $26.7000
  • 100 $24.5900
  • 500 $23.3600
  • 800 $22.7900
$22.7900 / $26.7000 Buy Now
Master Electronics   RoHS: Compliant 0
  • 1 $27.4900
  • 5 $26.3200
  • 25 $24.5900
  • 50 $23.6600
  • 100 $23.0700
  • 250 $22.7300
  • 500 $22.3900
$22.3900 / $27.4900 Buy Now

Part Details for APT19F100J

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APT19F100J Part Data Attributes

APT19F100J Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT19F100J Microchip Technology Inc Power Field-Effect Transistor, 20A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1875 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.44 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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