Part Details for APT150GT120JR by Microchip Technology Inc
Results Overview of APT150GT120JR by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
APT150GT120JR Information
APT150GT120JR by Microchip Technology Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT150GT120JR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5661
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Newark | Igbt Npt Medium Frequency Single 1200 V 150 A Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT150GT120JR RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$51.3800 / $63.3000 | Buy Now |
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DISTI #
APT150GT120JR-ND
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DigiKey | IGBT MOD 1200V 170A 830W ISOTOP Min Qty: 10 Lead time: 26 Weeks Container: Tube | Temporarily Out of Stock |
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$63.3000 | Buy Now |
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DISTI #
APT150GT120JR
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Avnet Americas | IGBT Module N-Channel 1200V 170A 20V SOT-227 Screw Mount - Rail/Tube (Alt: APT150GT120JR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$48.0988 / $53.0082 | Buy Now |
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DISTI #
494-APT150GT120JR
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Mouser Electronics | IGBT Modules IGBT NPT Medium Frequency Single 1200 V 150 A SOT-227 RoHS: Compliant | 0 |
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$63.3000 | Order Now |
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DISTI #
APT150GT120JR
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Microchip Technology Inc | IGBT NPT Medium Frequency Single 1200 V 150 A SOT-227, SOT-227, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$48.5000 / $63.3000 | Buy Now |
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Onlinecomponents.com | Trans IGBT Module N-CH 1200V 170A 830000mW RoHS: Compliant | 0 |
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$49.9900 / $60.4600 | Buy Now |
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DISTI #
APT150GT120JR
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TME | Module: IGBT, single transistor, Urmax: 1.2kV, Ic: 90A, SOT227B Min Qty: 1 | 0 |
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$72.7800 / $91.5200 | RFQ |
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NAC | FG, IGBT, 1200V, 150A, SOT-227 RoHS: Compliant Min Qty: 6 Package Multiple: 1 Container: Tube | 0 |
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$50.1300 / $58.7300 | Buy Now |
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DISTI #
APT150GT120JR
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 10 | 0 |
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$54.2900 / $56.4500 | Buy Now |
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Master Electronics | Trans IGBT Module N-CH 1200V 170A 830000mW RoHS: Compliant | 0 |
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$49.9900 / $60.4600 | Buy Now |
Part Details for APT150GT120JR
APT150GT120JR CAD Models
APT150GT120JR Part Data Attributes
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APT150GT120JR
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT150GT120JR
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 170A I(C), 1200V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | SOT-227, 4 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 170 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 710 ns | |
| Turn-on Time-Nom (ton) | 245 ns | |
| VCEsat-Max | 3.7 V |
APT150GT120JR Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.
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Ensure proper heat sinking, use a thermally conductive material for the heat sink, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures (above 125°C).
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The maximum allowed voltage on the gate driver output is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
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Yes, the APT150GT120JR can be used in a half-bridge configuration, but it's essential to ensure proper dead-time control and synchronization between the high-side and low-side drivers to prevent shoot-through currents.
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The bootstrap capacitor value depends on the specific application, but a general rule of thumb is to use a capacitor with a value of at least 10 times the gate charge of the power MOSFET. Consult the application note AN-1005 for more information.