Datasheets
APT1204R7SFLLG by:

Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT1204R7SFLLG by Microchip Technology Inc

Results Overview of APT1204R7SFLLG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

APT1204R7SFLLG Information

APT1204R7SFLLG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT1204R7SFLLG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5603
Newark Fredfet Mos7 1200 V 4.7 Ohm To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT1204R7SFLLG RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $11.7400
  • 100 $10.1300
  • 250 $9.7500
  • 500 $9.5300
$9.5300 / $11.7400 Buy Now
DISTI # APT1204R7SFLLG-ND
DigiKey MOSFET N-CH 1200V 3.5A D3PAK Min Qty: 50 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 50 $11.7400
$11.7400 Buy Now
DISTI # APT1204R7SFLLG
Avnet Americas Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(2+Tab) D3PAK - Rail/Tube (Alt: APT1204R7SFLLG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 50 $9.5125
  • 60 $9.3893
  • 110 $9.2075
  • 250 $9.0552
  • 500 $8.9037
$8.9037 / $9.5125 Buy Now
DISTI # 494-APT1204R7SFLLG
Mouser Electronics MOSFETs FREDFET MOS7 1200 V 4.7 Ohm TO-268 RoHS: Compliant 8
  • 1 $11.7400
  • 100 $10.1300
$10.1300 / $11.7400 Buy Now
DISTI # APT1204R7SFLLG
Microchip Technology Inc FREDFET MOS 7 1200 V 4.7 Ohm TO-268, TO-268, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $11.7400
  • 100 $10.1300
  • 250 $9.7500
  • 500 $9.5300
  • 1,000 $9.2900
  • 5,000 $8.9900
$8.9900 / $11.7400 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant 407 Factory Stock
  • 5 $11.3600
  • 25 $10.2800
  • 50 $10.0100
  • 100 $9.6300
  • 250 $9.4000
  • 500 $9.2500
  • 1,000 $9.1200
$9.1200 / $11.3600 Buy Now
DISTI # APT1204R7SFLLG
TME Transistor: N-MOSFET, unipolar, 1.2kV, 3.5A, Idm: 14A, 135W, D3PAK Min Qty: 1 0
  • 1 $16.9500
  • 3 $15.2600
  • 10 $13.4800
$13.4800 / $16.9500 RFQ
DISTI # APT1204R7SFLLG
IBS Electronics APT1204R7SFLLG by Microchip is a 4.7&#xB5, H shielded power inductor with low DC resistance, high current handling, and compact SMD package, ideal for power management applications. Min Qty: 30 Package Multiple: 1 510
  • 30 $12.7920
  • 60 $12.7270
  • 120 $12.6620
  • 150 $12.6360
  • 450 $12.5060
$12.5060 / $12.7920 Buy Now
NAC FG, FREDFET, 1200V, 4.7_OHM, D-3, TO-268, RoHS RoHS: Compliant Min Qty: 32 Package Multiple: 1 Container: Tube 0
  • 1 $11.1900
  • 100 $10.1500
  • 500 $9.5100
  • 1,000 $9.2800
$9.2800 / $11.1900 Buy Now
DISTI # APT1204R7SFLLG
Richardson RFPD POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 50 0
  • 50 $10.1800
  • 100 $10.0500
$10.0500 / $10.1800 Buy Now
DISTI # APT1204R7SFLLG
Avnet Silica Trans MOSFET NCH 12KV 35A 3Pin2Tab D3PAK (Alt: APT1204R7SFLLG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT1204R7SFLLG
EBV Elektronik Trans MOSFET NCH 12KV 35A 3Pin2Tab D3PAK (Alt: APT1204R7SFLLG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant 407 Factory Stock
  • 5 $11.3600
  • 25 $10.2800
  • 50 $10.0100
  • 100 $9.6300
  • 250 $9.4000
  • 500 $9.2500
  • 1,000 $9.1200
$9.1200 / $11.3600 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 420
  • 30 $16.4000
  • 420 $15.1400
$15.1400 / $16.4000 Buy Now

Part Details for APT1204R7SFLLG

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APT1204R7SFLLG Part Data Attributes

APT1204R7SFLLG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT1204R7SFLLG Microchip Technology Inc Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description D3PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 425 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Pure Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT1204R7SFLLG

This table gives cross-reference parts and alternative options found for APT1204R7SFLLG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1204R7SFLLG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT1204R7SFLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1204R7SFLLG vs APT1204R7SFLLG
APT1204R7SFLLE3 Microsemi Corporation Check for Price Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK, 3 PIN APT1204R7SFLLG vs APT1204R7SFLLE3
APT1204R7BFLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, TO-247, 3 PIN APT1204R7SFLLG vs APT1204R7BFLL
APT1204R7SFLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK, 3 PIN APT1204R7SFLLG vs APT1204R7SFLL

APT1204R7SFLLG Related Parts

APT1204R7SFLLG Frequently Asked Questions (FAQ)

  • For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer. This helps to dissipate heat efficiently. Additionally, ensure that the PCB layout allows for good airflow around the device.

  • To ensure reliable operation across the full temperature range, it is essential to follow proper PCB design and layout guidelines, use a suitable thermal interface material, and ensure that the device is properly soldered. Additionally, consider using a thermally conductive heat sink or a heat spreader to dissipate heat efficiently.

  • For EMI and EMC compliance, it is crucial to follow proper PCB design and layout guidelines, use a suitable EMI filter, and ensure that the device is properly shielded. Additionally, consider using a common-mode choke and a ferrite bead to reduce electromagnetic interference.

  • To troubleshoot issues with the device not turning on or not functioning as expected, first check the power supply voltage and ensure it is within the recommended range. Verify that the input voltage is stable and that the device is properly soldered. Check for any signs of physical damage or overheating. If the issue persists, consult the datasheet and application notes for further guidance.

  • To prevent damage, it is recommended to store the devices in their original packaging or in a dry, cool place away from direct sunlight. Avoid exposing the devices to moisture, extreme temperatures, or physical stress. Handle the devices by the body, avoiding touching the pins or leads to prevent electrostatic discharge.

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