Part Details for APT106N60B2C6 by Microsemi Corporation
Results Overview of APT106N60B2C6 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
APT106N60B2C6 Information
APT106N60B2C6 by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT106N60B2C6
APT106N60B2C6 CAD Models
APT106N60B2C6 Part Data Attributes
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APT106N60B2C6
Microsemi Corporation
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Datasheet
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APT106N60B2C6
Microsemi Corporation
Power Field-Effect Transistor, 106A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | TMAX-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 2200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 106 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 318 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT106N60B2C6
This table gives cross-reference parts and alternative options found for APT106N60B2C6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT106N60B2C6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT94N60L2C3E3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN | APT106N60B2C6 vs APT94N60L2C3E3 |
APT106N60B2C6 Frequently Asked Questions (FAQ)
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Microsemi recommends a PCB layout with a thermal pad connected to a large copper area on the top and bottom layers, with multiple vias to dissipate heat efficiently.
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Ensure proper heat sinking, use a thermally conductive material for the heat sink, and consider derating the device's power handling capability at high temperatures.
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Microsemi recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure fast switching times and low losses.
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Yes, but ensure that the devices are matched for gate threshold voltage and on-resistance, and that the gate drive circuitry is designed to handle the increased current requirements.
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Use ESD-safe handling procedures, such as wrist straps and ESD mats, and consider adding ESD protection devices, such as TVS diodes, to the circuit.