Part Details for APT100GT60JR by Microchip Technology Inc
Results Overview of APT100GT60JR by Microchip Technology Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
APT100GT60JR Information
APT100GT60JR by Microchip Technology Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT100GT60JR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
APT100GT60JR
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Microchip Technology Inc | IGBT NPT Medium Frequency Single 600 V 100 A SOT-227, Projected EOL: 2025-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days |
0 Alternates Available |
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Buy Now | |
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NAC | FG, IGBT, 600V, 100A, SOT-227 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Container: Tube | 0 |
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RFQ | |
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DISTI #
APT100GT60JR
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for APT100GT60JR
APT100GT60JR CAD Models
APT100GT60JR Part Data Attributes
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APT100GT60JR
Microchip Technology Inc
Buy Now
Datasheet
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APT100GT60JR
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 148A I(C), 600V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 148 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 30 V | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 450 ns | |
| Turn-on Time-Nom (ton) | 115 ns |
APT100GT60JR Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer to ensure good heat dissipation. A minimum of 2 oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider derating the device's power dissipation according to the temperature derating curve provided in the datasheet.
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The maximum allowed voltage on the gate driver output is ±20V, with a maximum transient voltage of ±30V for a duration of less than 100ns. Exceeding these limits can damage the device.
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To protect the device from EOS, use a suitable input filter, such as a TVS diode or a ferrite bead, to limit voltage transients and spikes. Additionally, ensure that the device is operated within the recommended voltage and current ratings.
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The recommended gate resistance value is between 1Ω and 10Ω, depending on the specific application and switching frequency. A lower gate resistance can improve switching speed but may increase power losses.