Datasheets
APT1003RSFLLG by:

Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT1003RSFLLG by Microchip Technology Inc

Results Overview of APT1003RSFLLG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

APT1003RSFLLG Information

APT1003RSFLLG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT1003RSFLLG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5558
Newark Fredfet Mos7 1000 V 3 Ohm To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT1003RSFLLG RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $11.9700
  • 100 $10.3500
  • 250 $9.9400
  • 500 $9.7200
$9.7200 / $11.9700 Buy Now
DISTI # APT1003RSFLLG-ND
DigiKey MOSFET N-CH 1000V 4A D3PAK Min Qty: 50 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 50 $11.9700
$11.9700 Buy Now
DISTI # APT1003RSFLLG
Avnet Americas Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D3PAK - Rail/Tube (Alt: APT1003RSFLLG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 50 $9.7250
  • 60 $9.5683
  • 110 $9.4132
  • 250 $9.2575
  • 500 $9.1026
$9.1026 / $9.7250 Buy Now
DISTI # 494-APT1003RSFLLG
Mouser Electronics MOSFETs FREDFET MOS7 1000 V 3 Ohm TO-268 RoHS: Compliant 46
  • 1 $11.9700
  • 100 $10.3500
$10.3500 / $11.9700 Buy Now
DISTI # APT1003RSFLLG
Microchip Technology Inc FREDFET MOS 7 1000 V 3 Ohm TO-268, TO-268, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $11.9700
  • 100 $10.3500
  • 250 $9.9400
  • 500 $9.7200
  • 1,000 $9.4800
  • 5,000 $9.1800
$9.1800 / $11.9700 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 4A Continuous Drain (Id) @ 25°C - 3 Ohm @ 2A, 10V - TO-268-3 Package - Surface Mount. RoHS: Compliant 0
  • 5 $11.6100
  • 25 $10.5100
  • 50 $10.2400
  • 100 $9.8500
  • 250 $9.6000
  • 500 $9.4600
  • 1,000 $9.3200
$9.3200 / $11.6100 Buy Now
DISTI # APT1003RSFLLG
TME Transistor: N-MOSFET, unipolar, 1kV, 4A, Idm: 16A, 139W, D3PAK Min Qty: 1 0
  • 1 $17.4100
  • 3 $15.6000
  • 10 $13.7800
$13.7800 / $17.4100 RFQ
NAC FG, FREDFET, 1000V, D3, RoHS, TO-268 RoHS: Compliant Min Qty: 32 Package Multiple: 1 Container: Tube 0
  • 1 $11.4400
  • 100 $10.3700
  • 500 $9.7200
  • 1,000 $9.4900
$9.4900 / $11.4400 Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 4A Continuous Drain (Id) @ 25°C - 3 Ohm @ 2A, 10V - TO-268-3 Package - Surface Mount. RoHS: Compliant 0
  • 5 $11.6100
  • 25 $10.5100
  • 50 $10.2400
  • 100 $9.8500
  • 250 $9.6000
  • 500 $9.4600
  • 1,000 $9.3200
$9.3200 / $11.6100 Buy Now

Part Details for APT1003RSFLLG

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APT1003RSFLLG Part Data Attributes

APT1003RSFLLG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT1003RSFLLG Microchip Technology Inc Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description D2PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 425 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Pure Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT1003RSFLLG

This table gives cross-reference parts and alternative options found for APT1003RSFLLG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1003RSFLLG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT1003RSFLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 APT1003RSFLLG vs APT1003RSFLLG
APT1003RSLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1003RSFLLG vs APT1003RSLLG
Part Number Manufacturer Composite Price Description Compare
IXFP4N100P IXYS Corporation $1.9213 Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN APT1003RSFLLG vs IXFP4N100P
APT1003RSLLG Microchip Technology Inc $10.0349 Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT1003RSFLLG vs APT1003RSLLG
APT1003RBFLLG Microchip Technology Inc $10.9946 Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC APT1003RSFLLG vs APT1003RBFLLG
APT1003RSFLLG/TR Microchip Technology Inc $13.1352 Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET APT1003RSFLLG vs APT1003RSFLLG/TR
IXFP4N100P Littelfuse Inc $3.0173 Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN APT1003RSFLLG vs IXFP4N100P
APT1003RKLLG Microchip Technology Inc $8.0079 Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB APT1003RSFLLG vs APT1003RKLLG
APT1003RSFLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 APT1003RSFLLG vs APT1003RSFLL
IXFT4N100Q IXYS Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN APT1003RSFLLG vs IXFT4N100Q
APT1003RBLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 APT1003RSFLLG vs APT1003RBLL
IXFA4N100QSN IXYS Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3/2 APT1003RSFLLG vs IXFA4N100QSN

APT1003RSFLLG Related Parts

APT1003RSFLLG Frequently Asked Questions (FAQ)

  • Microchip provides a recommended PCB layout in the APT1003RSFLLG evaluation board user's guide, which includes guidelines for component placement, thermal management, and routing. Following this layout can help ensure optimal performance and minimize electromagnetic interference (EMI).

  • The input capacitor values depend on the input voltage, output voltage, and desired ripple current. A good starting point is to use the capacitor selection guide in the datasheet, and then simulate the design using tools like LTspice or Microchip's Power Designer to optimize the values for the specific application.

  • While the datasheet specifies an operating temperature range of -40°C to 125°C, the maximum ambient temperature for reliable operation depends on the specific application and cooling conditions. As a general rule, it's recommended to derate the device's power dissipation by 1% for every 1°C above 85°C to ensure reliable operation.

  • The APT1003RSFLLG has built-in OVP and UVP features, but they require external resistors and capacitors to set the threshold voltages. The datasheet provides a detailed description of the OVP and UVP circuits, and Microchip's application notes offer guidance on implementing these features in specific designs.

  • The output capacitor type and value depend on the output voltage, output current, and desired stability. A good starting point is to use a low-ESR ceramic capacitor with a value between 10uF to 22uF. The datasheet provides guidance on output capacitor selection, and simulation tools can help optimize the value for the specific application.

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