Part Details for APT1001RBNR by Advanced Power Technology
Results Overview of APT1001RBNR by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
APT1001RBNR Information
APT1001RBNR by Advanced Power Technology is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT1001RBNR
APT1001RBNR CAD Models
APT1001RBNR Part Data Attributes
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APT1001RBNR
Advanced Power Technology
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Datasheet
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APT1001RBNR
Advanced Power Technology
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 190 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 310 W | |
| Power Dissipation-Max (Abs) | 310 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 245 ns | |
| Turn-on Time-Max (ton) | 81 ns |
Alternate Parts for APT1001RBNR
This table gives cross-reference parts and alternative options found for APT1001RBNR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001RBNR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PHX2N60E | NXP Semiconductors | Check for Price | TRANSISTOR 1.3 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, FULL PACK-3, FET General Purpose Power | APT1001RBNR vs PHX2N60E |
| BUK552-60B,127 | NXP Semiconductors | Check for Price | 13A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | APT1001RBNR vs BUK552-60B,127 |
| PHP44N06T | NXP Semiconductors | Check for Price | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | APT1001RBNR vs PHP44N06T |
| IRL1404ZLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | APT1001RBNR vs IRL1404ZLPBF |
| APT6039BNR | Microsemi Corporation | Check for Price | 17A, 600V, 0.39ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | APT1001RBNR vs APT6039BNR |
| PHP80N06LT | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | APT1001RBNR vs PHP80N06LT |
| PHW8N50E | NXP Semiconductors | Check for Price | TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power | APT1001RBNR vs PHW8N50E |
| BUK474-60H | NXP Semiconductors | Check for Price | TRANSISTOR 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | APT1001RBNR vs BUK474-60H |
| BFC45 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 9A, 800V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | APT1001RBNR vs BFC45 |
| BUK455-60H | NXP Semiconductors | Check for Price | TRANSISTOR 43 A, 60 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | APT1001RBNR vs BUK455-60H |