Part Details for AOTF12T60P by Alpha & Omega Semiconductor
Results Overview of AOTF12T60P by Alpha & Omega Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
AOTF12T60P Information
AOTF12T60P by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for AOTF12T60P
AOTF12T60P CAD Models
AOTF12T60P Part Data Attributes
|
|
AOTF12T60P
Alpha & Omega Semiconductor
Buy Now
Datasheet
|
Compare Parts:
AOTF12T60P
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 12A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 750 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.52 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AOTF12T60P
This table gives cross-reference parts and alternative options found for AOTF12T60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOTF12T60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FMP13N60E | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | AOTF12T60P vs FMP13N60E |
| FMH13N60ES | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), SC-65, 3 PIN | AOTF12T60P vs FMH13N60ES |
| STB13NK60ZT4 | STMicroelectronics | Check for Price | N-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in D2PAK package | AOTF12T60P vs STB13NK60ZT4 |
| FMI13N60ES | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN | AOTF12T60P vs FMI13N60ES |
| STB13NK60Z | STMicroelectronics | Check for Price | 13A, 600V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | AOTF12T60P vs STB13NK60Z |
AOTF12T60P Frequently Asked Questions (FAQ)
-
The maximum junction temperature that the AOTF12T60P can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
-
To ensure proper cooling, it's recommended to attach a heat sink to the device, and apply a thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to provide adequate airflow and heat dissipation.
-
The recommended gate drive voltage for the AOTF12T60P is between 10V to 15V. However, the exact voltage may vary depending on the specific application and the desired switching performance.
-
Yes, the AOTF12T60P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
-
The recommended PCB layout and design considerations for the AOTF12T60P include using a multi-layer PCB with a solid ground plane, keeping the high-current paths short and wide, and using a Kelvin connection for the source pin. Additionally, it's recommended to follow the datasheet's recommended footprint and pad layout.