Part Details for AOT8N80L by Alpha & Omega Semiconductor
Results Overview of AOT8N80L by Alpha & Omega Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
AOT8N80L Information
AOT8N80L by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOT8N80L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1434-5-ND
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DigiKey | MOSFET N-CH 800V 7.4A TO220 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
968 In Stock |
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$0.6887 / $2.4400 | Buy Now |
Part Details for AOT8N80L
AOT8N80L CAD Models
AOT8N80L Part Data Attributes
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AOT8N80L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOT8N80L
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 7.4A I(D), 800V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Part Package Code | TO-220AB | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 433 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 7.4 A | |
| Drain-source On Resistance-Max | 1.63 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 26 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AOT8N80L
This table gives cross-reference parts and alternative options found for AOT8N80L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOT8N80L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AOK8N80 | Alpha & Omega Semiconductor | $0.9415 | Power Field-Effect Transistor, 7.4A I(D), 800V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | AOT8N80L vs AOK8N80 |
| 7N75L-TA3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7A I(D), 750V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | AOT8N80L vs 7N75L-TA3-T |
| 7N75G-TA3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7A I(D), 750V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | AOT8N80L vs 7N75G-TA3-T |
| FQP7N80_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | AOT8N80L vs FQP7N80_NL |
| AOTF8N80L | Alpha & Omega Semiconductor | Check for Price | Power Field-Effect Transistor, 7.4A I(D), 800V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220F, 3 PIN | AOT8N80L vs AOTF8N80L |
| IXFI7N80P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 7A I(D), 800V, 1.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN | AOT8N80L vs IXFI7N80P |
| STB7NC80ZT4 | STMicroelectronics | Check for Price | 6.5A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | AOT8N80L vs STB7NC80ZT4 |
| FQA7N80_F109 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | AOT8N80L vs FQA7N80_F109 |
AOT8N80L Frequently Asked Questions (FAQ)
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AOT8N80L is a high-power device, and proper PCB layout is crucial for thermal management. It is recommended to use a multi-layer PCB with a solid ground plane, and to place thermal vias under the device to dissipate heat efficiently. Additionally, keep the copper traces wide and short to minimize resistance and inductance.
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To ensure reliable operation at high temperatures, it is essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation, and ensure that the device is properly soldered to the PCB to minimize thermal resistance.
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AOT8N80L has an integrated ESD protection circuit, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is properly grounded during handling. Additionally, consider adding external ESD protection devices, such as TVS diodes, to further protect the device from electrostatic discharge.
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AOT8N80L is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper qualification and testing. Alpha & Omega Semiconductor provides a range of reliability and quality data, including AEC-Q101 qualification, to support the use of this device in demanding applications. However, it is essential to consult with the manufacturer and perform thorough testing and validation to ensure the device meets the specific requirements of the application.
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To troubleshoot common issues in a circuit using AOT8N80L, start by reviewing the datasheet and application notes to ensure that the device is being used within its recommended operating conditions. Check for proper PCB layout, thermal management, and soldering. Use oscilloscopes and thermal imaging tools to identify potential issues, such as voltage spikes or hotspots. Consult with the manufacturer's technical support team or a qualified engineer for further assistance.