Part Details for AOT12N30L by Alpha & Omega Semiconductor
Results Overview of AOT12N30L by Alpha & Omega Semiconductor
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AOT12N30L Information
AOT12N30L by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for AOT12N30L
AOT12N30L CAD Models
AOT12N30L Part Data Attributes
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AOT12N30L
Alpha & Omega Semiconductor
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Datasheet
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AOT12N30L
Alpha & Omega Semiconductor
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 11.5 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 132 W | |
| Surface Mount | NO |
AOT12N30L Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the AOT12N30L is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C-in²/W. Additionally, ensure good airflow around the heat sink to prevent hot spots.
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The recommended gate drive voltage for the AOT12N30L is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate oxide stress and reduce the device's lifetime.
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Yes, the AOT12N30L can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
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A good PCB layout for the AOT12N30L should minimize the parasitic inductance and resistance. Use a compact layout with short traces, and ensure that the drain and source pins are connected to a low-impedance power plane. Also, use a separate ground plane for the gate driver to prevent noise coupling.