Part Details for AIKW40N65DH5XKSA1 by Infineon Technologies AG
Results Overview of AIKW40N65DH5XKSA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
AIKW40N65DH5XKSA1 Information
AIKW40N65DH5XKSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AIKW40N65DH5XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93AC6948
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Newark | Igbt, Aec-Q101, 650V, 74A, 250W, To-247 Rohs Compliant: Yes |Infineon AIKW40N65DH5XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$4.6400 / $7.0200 | Buy Now |
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DISTI #
448-AIKW40N65DH5XKSA1-ND
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DigiKey | IGBT TRENCH 650V 74A TO247-3-41 Min Qty: 1 Lead time: 13 Weeks Container: Tube | Temporarily Out of Stock |
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$3.0838 / $5.5100 | Buy Now |
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DISTI #
AIKW40N65DH5XKSA1
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Avnet Americas | Transistor IGBT N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: AIKW40N65DH5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$3.1692 | Buy Now |
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DISTI #
726-AIKW40N65DH5XKSA
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Mouser Electronics | IGBTs DISCRETES RoHS: Compliant | 255 |
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$3.0800 / $5.5200 | Buy Now |
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DISTI #
AIKW40N65DH5XKSA1
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TME | Transistor: IGBT, 650V, 46A, 125W, TO247-3, H5 Min Qty: 1 | 0 |
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$4.4500 / $7.8200 | RFQ |
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DISTI #
SP001346778
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EBV Elektronik | Transistor IGBT NCH 650V 74A 3Pin TO247 Tube (Alt: SP001346778) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AIKW40N65DH5XKSA1
AIKW40N65DH5XKSA1 CAD Models
AIKW40N65DH5XKSA1 Part Data Attributes
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AIKW40N65DH5XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AIKW40N65DH5XKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5.7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 166 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 299 ns | |
| Turn-on Time-Nom (ton) | 36 ns | |
| VCEsat-Max | 2.05 V |
AIKW40N65DH5XKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the AIKW40N65DH5XKSA1 is -55°C to 175°C, as specified in the datasheet. However, it's essential to consider the derating curves for power dissipation and junction temperature to ensure reliable operation.
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To ensure the VGS is within the recommended range, use a gate driver with a suitable output voltage and impedance. The datasheet recommends a VGS of ±20V, but it's essential to consider the specific application requirements and potential voltage transients.
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For optimal performance and thermal management, follow the recommended PCB layout guidelines in the datasheet, including using a thermal pad, vias, and a heat sink if necessary. Ensure good thermal conductivity and minimize thermal resistance to prevent overheating.
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The internal diode can conduct during switching transitions, potentially causing unwanted currents. To prevent this, use a suitable gate driver with a built-in diode emulation or add an external diode in parallel with the MOSFET. Additionally, consider using a MOSFET with a built-in diode or a Schottky diode in parallel.
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The AIKW40N65DH5XKSA1 has an ESD rating of HBM 2kV and CDM 1kV. To prevent ESD damage, handle the device with ESD-protected equipment, wear an ESD strap, and follow proper handling and storage procedures.