Datasheets
AIKW30N60CTXKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for AIKW30N60CTXKSA1 by Infineon Technologies AG

Results Overview of AIKW30N60CTXKSA1 by Infineon Technologies AG

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AIKW30N60CTXKSA1 Information

AIKW30N60CTXKSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AIKW30N60CTXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC6947
Newark Igbt, Single, 600V, 60A, To-247, Continuous Collector Current:60A, Collector Emitter Saturation Voltage:1.5V, Power Dissipation:187W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon AIKW30N60CTXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 333
  • 1 $7.4900
  • 10 $6.1100
  • 25 $5.7100
  • 50 $5.5300
  • 100 $5.3500
  • 480 $5.0000
$5.0000 / $7.4900 Buy Now
DISTI # 448-AIKW30N60CTXKSA1-ND
DigiKey IGBT TRENCH FS 600V 60A TO-247-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube 209
In Stock
  • 1 $5.9000
  • 10 $4.5220
  • 30 $4.1183
  • 120 $3.7582
  • 270 $3.6041
  • 510 $3.5055
  • 1,020 $3.4164
  • 2,520 $3.3234
$3.3234 / $5.9000 Buy Now
DISTI # AIKW30N60CTXKSA1
Avnet Americas Transistor IGBT N-CH 600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: AIKW30N60CTXKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 240 $3.4205
$3.4205 Buy Now
DISTI # 726-AIKW30N60CTXKSA1
Mouser Electronics IGBTs DISCRETES RoHS: Compliant 286
  • 1 $5.9000
  • 10 $4.5200
  • 25 $4.1200
  • 100 $3.7600
  • 240 $3.4100
  • 1,200 $3.3200
$3.3200 / $5.9000 Buy Now
DISTI # AIKW30N60CTXKSA1
TME Transistor: IGBT, 600V, 30A, 187W, TO247-3 Min Qty: 1 0
  • 1 $5.8500
  • 10 $5.1900
  • 30 $4.4700
  • 120 $4.3300
$4.3300 / $5.8500 RFQ
DISTI # SP001346786
EBV Elektronik Transistor IGBT NCH 600V 60A 3Pin TO247 Tube (Alt: SP001346786) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 120
RFQ

Part Details for AIKW30N60CTXKSA1

AIKW30N60CTXKSA1 CAD Models

AIKW30N60CTXKSA1 Part Data Attributes

AIKW30N60CTXKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
AIKW30N60CTXKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 187 W
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 388 ns
Turn-on Time-Nom (ton) 50 ns
VCEsat-Max 2.05 V

AIKW30N60CTXKSA1 Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the AIKW30N60CTXKSA1 can withstand is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.

  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 280 W for the AIKW30N60CTXKSA1.

  • The recommended gate resistor value for the AIKW30N60CTXKSA1 is between 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact Infineon's technical support for more information.

  • Yes, the AIKW30N60CTXKSA1 is suitable for high-reliability applications. It's manufactured using a robust and reliable process, and it's qualified according to the AEC-Q101 standard for automotive applications. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.

  • To protect the AIKW30N60CTXKSA1 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuit. The voltage regulator should be designed to provide a stable output voltage within the device's specified range, and the overcurrent protection circuit should be designed to detect and respond to overcurrent conditions quickly enough to prevent damage to the device.

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