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Part Details for AFGY100T65SPD by onsemi
Results Overview of AFGY100T65SPD by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
AFGY100T65SPD Information
AFGY100T65SPD by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AFGY100T65SPD
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
12AJ6777
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Newark | Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant: Yes |Onsemi AFGY100T65SPD RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 415 |
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$9.6700 / $14.4000 | Buy Now |
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DISTI #
488-AFGY100T65SPD-ND
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DigiKey | IGBT TRENCH FS 650V 120A TO-247 Min Qty: 1 Lead time: 99 Weeks Container: Tube |
334 In Stock |
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$6.1366 / $12.4600 | Buy Now |
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DISTI #
AFGY100T65SPD
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Avnet Americas | Transistor IGBT N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: AFGY100T65SPD) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 111 Weeks, 0 Days Container: Tube | 3150 Factory Stock |
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$5.8444 / $6.2940 | Buy Now |
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DISTI #
863-AFGY100T65SPD
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Mouser Electronics | IGBTs FS3 IGBT 650V/100A AND AUTO STEALTH DIODE RoHS: Compliant | 1803 |
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$7.9300 / $11.8000 | Buy Now |
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Onlinecomponents.com | IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3 RoHS: Compliant | 0 |
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$6.0900 / $12.7100 | Buy Now |
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DISTI #
87651119
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Verical | Trans IGBT Chip N-CH 650V 120A 660W Automotive 3-Pin(3+Tab) TO-247 Tube Min Qty: 450 Package Multiple: 450 | Americas - 3150 |
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$6.1752 | Buy Now |
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DISTI #
80936037
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Verical | Trans IGBT Chip N-CH 650V 120A 660W Automotive 3-Pin(3+Tab) TO-247 Tube Min Qty: 450 Package Multiple: 450 Date Code: 2417 | Americas - 1350 |
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$6.1750 | Buy Now |
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Future Electronics | IGBT Trench Field Stop 650 V 120 A 660 W Through Hole TO-247-3 Min Qty: 30 Package Multiple: 30 |
900 null |
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$6.0200 / $6.1700 | Buy Now |
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DISTI #
AFGY100T65SPD
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$6.1400 | Buy Now |
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DISTI #
AFGY100T65SPD
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Avnet Silica | Transistor IGBT NCH 650V 120A 3Pin TO247 Tube (Alt: AFGY100T65SPD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 53 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for AFGY100T65SPD
AFGY100T65SPD CAD Models
AFGY100T65SPD Part Data Attributes
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AFGY100T65SPD
onsemi
Buy Now
Datasheet
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Compare Parts:
AFGY100T65SPD
onsemi
IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3, TO-247-3, 450-TUBE, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247-3 | |
| Manufacturer Package Code | 340CU | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Date Of Intro | 2020-01-28 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 120 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.3 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 882 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.05 V |
AFGY100T65SPD Frequently Asked Questions (FAQ)
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A good thermal design should include a solid ground plane, thermal vias, and a heat sink. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or use thermal simulation tools to ensure optimal performance.
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The AFGY100T65SPD requires a specific biasing scheme to achieve optimal performance. Ensure that the gate-source voltage (Vgs) is within the recommended range (typically -2V to 2V) and the drain-source voltage (Vds) is within the recommended range (typically 10V to 65V). Consult the datasheet for specific biasing requirements.
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Monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent overheating. Ensure that the device operates within the recommended temperature range (typically -40°C to 150°C) and that the power dissipation is within the recommended limits.
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The AFGY100T65SPD is sensitive to electrostatic discharge (ESD). Ensure that all handling and assembly procedures follow proper ESD protection guidelines, including the use of ESD-safe materials, wrist straps, and ionizers. Consult the datasheet for specific ESD protection recommendations.
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Store the AFGY100T65SPD in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or die. Use anti-static packaging and follow proper ESD protection guidelines during storage and handling.