Part Details for A2N7002HW-HF by Comchip Technology Corporation Ltd
Results Overview of A2N7002HW-HF by Comchip Technology Corporation Ltd
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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A2N7002HW-HF Information
A2N7002HW-HF by Comchip Technology Corporation Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for A2N7002HW-HF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-A2N7002HW-HFTR-ND
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DigiKey | MOSFET N-CH 60V 300MA SOT323 Min Qty: 3000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.0371 / $0.0614 | Buy Now |
DISTI #
750-A2N7002HW-HF
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Mouser Electronics | MOSFETs AUTOMOTIVE MOSFET N-CH 60V 0.3A SOT-323 RoHS: Compliant | 0 |
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$0.0400 / $0.3900 | Order Now |
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NAC | AUTOMOTIVE MOSFET N-CH 60V 0.3A SOT-323 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.0400 / $0.1000 | Buy Now |
Part Details for A2N7002HW-HF
A2N7002HW-HF CAD Models
A2N7002HW-HF Part Data Attributes
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A2N7002HW-HF
Comchip Technology Corporation Ltd
Buy Now
Datasheet
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A2N7002HW-HF
Comchip Technology Corporation Ltd
Small Signal Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | COMCHIP TECHNOLOGY CO LTD | |
Package Description | SOT-323, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2020-01-20 | |
Samacsys Manufacturer | Comchip Technology | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.3 A | |
Drain-source On Resistance-Max | 0.0025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.25 W | |
Power Dissipation-Max (Abs) | 0.25 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |