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Part Details for ZXMN6A09GTA by Diodes Incorporated
Results Overview of ZXMN6A09GTA by Diodes Incorporated
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
ZXMN6A09GTA Information
ZXMN6A09GTA by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN6A09GTA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K9597
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Newark | N Channel Mosfet, 60V, 6.9A Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:6.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Diodes Inc. ZXMN6A09GTA RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2310 |
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$0.9220 / $2.1000 | Buy Now |
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DISTI #
79AH8146
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Newark | Mosfet Bvdss: 41V~60V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZXMN6A09GTA RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6410 / $0.6910 | Buy Now |
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DISTI #
86AK6613
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Newark | Mosfet, N-Ch, 60V, 6.9A, Sot-223 Rohs Compliant: Yes |Diodes Inc. ZXMN6A09GTA RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.8260 / $0.8820 | Buy Now |
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DISTI #
ZXMN6A09GCT-ND
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DigiKey | MOSFET N-CH 60V 5.4A SOT223 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
644 In Stock |
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$0.4710 / $1.5900 | Buy Now |
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DISTI #
ZXMN6A09GTA
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Avnet Americas | Power MOSFET, Low Voltage, N Channel, 60 V, 6.9 A, 0.045 ohm, SOT-223, Surface Mount - Tape and Reel (Alt: ZXMN6A09GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 60000 Factory Stock |
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$0.4226 | Buy Now |
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DISTI #
522-ZXMN6A09GTA
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Mouser Electronics | MOSFETs N-Ch 60V 7.5A RoHS: Compliant | 2929 |
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$0.4710 / $1.5600 | Buy Now |
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DISTI #
E02:0323_01120193
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Arrow Electronics | Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Date Code: 2425 | Europe - 9000 |
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$0.4945 | Buy Now |
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DISTI #
V36:1790_06708107
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Arrow Electronics | Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2331 | Americas - 7000 |
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$0.4396 | Buy Now |
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DISTI #
V72:2272_06708107
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Arrow Electronics | Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 96 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2349 Container: Cut Strips | Americas - 800 |
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$0.5058 / $1.0463 | Buy Now |
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DISTI #
70438839
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RS | MOSFET N-Channel 60V 7.5A SOT223 Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.5900 | RFQ |
Part Details for ZXMN6A09GTA
ZXMN6A09GTA CAD Models
ZXMN6A09GTA Part Data Attributes
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ZXMN6A09GTA
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
ZXMN6A09GTA
Diodes Incorporated
Small Signal Field-Effect Transistor, 5.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | SOT | |
| Package Description | SOT-223, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 0.07 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 59 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ZXMN6A09GTA
This table gives cross-reference parts and alternative options found for ZXMN6A09GTA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMN6A09GTA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ZXMN6A09GTA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 5.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 | ZXMN6A09GTA vs ZXMN6A09GTA |
| ZXMN6A09GTC | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 | ZXMN6A09GTA vs ZXMN6A09GTC |
| UZXMN6A09GTA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 | ZXMN6A09GTA vs UZXMN6A09GTA |
| UZXMN6A09GTC | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 | ZXMN6A09GTA vs UZXMN6A09GTC |
| UZXMN6A09GTC | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 | ZXMN6A09GTA vs UZXMN6A09GTC |
ZXMN6A09GTA Frequently Asked Questions (FAQ)
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A good PCB layout for the ZXMN6A09GTA should include a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a solid ground plane to reduce thermal resistance.
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To ensure proper biasing, the ZXMN6A09GTA requires a stable input voltage (VIN) between 4.5V to 18V, and a bias voltage (VCC) between 4.5V to 18V. The device also requires a minimum input current of 10mA to maintain regulation.
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When designing a power supply with the ZXMN6A09GTA, critical components to consider include input and output capacitors, inductors, and resistors. The selection of these components will impact the overall performance, efficiency, and stability of the power supply.
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To protect the ZXMN6A09GTA from overvoltage and undervoltage conditions, consider adding overvoltage protection (OVP) and undervoltage protection (UVP) circuits to the design. These circuits can be implemented using zener diodes, TVS diodes, or dedicated OVP/UVP ICs.
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The ZXMN6A09GTA has a maximum junction temperature (TJ) of 150°C. To ensure reliable operation, the device should be mounted on a heat sink or a PCB with a thermal pad to dissipate heat efficiently. The ambient temperature should be kept below 85°C to prevent overheating.