Part Details for ZXMN10A25KTC by Zetex / Diodes Inc
Results Overview of ZXMN10A25KTC by Zetex / Diodes Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
ZXMN10A25KTC Information
ZXMN10A25KTC by Zetex / Diodes Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN10A25KTC
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88813931
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Verical | Trans MOSFET N-CH 100V 4.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2320 | Americas - 2500 |
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$0.4961 | Buy Now |
Part Details for ZXMN10A25KTC
ZXMN10A25KTC CAD Models
ZXMN10A25KTC Part Data Attributes
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ZXMN10A25KTC
Zetex / Diodes Inc
Buy Now
Datasheet
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ZXMN10A25KTC
Zetex / Diodes Inc
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ZETEX PLC | |
| Package Description | DPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |