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Part Details for YJL2301D by Yangzhou Yangjie Electronics Co Ltd
Results Overview of YJL2301D by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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YJL2301D Information
YJL2301D by Yangzhou Yangjie Electronics Co Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for YJL2301D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
YJL2301D-YAN
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TME | Transistor: P-MOSFET, TRENCH POWER LV, unipolar, -15V, -3A, 1W Min Qty: 20 | 1680 |
|
$0.0287 / $0.0431 | Buy Now |
Part Details for YJL2301D
YJL2301D CAD Models
YJL2301D Part Data Attributes
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YJL2301D
Yangzhou Yangjie Electronics Co Ltd
Buy Now
Datasheet
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YJL2301D
Yangzhou Yangjie Electronics Co Ltd
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2020-09-24 | |
| Samacsys Manufacturer | Yangzhou Yangjie Electronic Technology Co., Ltd. | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 19 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 0.047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 103 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 1 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |