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OMNIFET fully autoprotected Power MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
VNB35N07-E by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7947
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Newark | Power Load Sw, Omnifet, 18V, To-263-3, Power Load Switch Type:Low Side, No. Of Channels:1Channels, Input Voltage:18V, Current Limit:35A, On State Resistance:0.028Ohm, Ic Case/Package:To-263 (D2Pak), No. Of Pins:3Pins, Msl:- Rohs Compliant: Yes |Stmicroelectronics VNB35N07-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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STMicroelectronics | OMNIFET fully autoprotected Power MOSFET COO: China RoHS: Compliant Min Qty: 1 | 760 |
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$3.2100 / $5.1300 | Buy Now |
|
Chip Stock | 1613 |
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RFQ | ||
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Vyrian | Transistors | 827 |
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RFQ | |
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Win Source Electronics | ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET | MOSFET OMNIFET 70V 35A D2PAK | 7500 |
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$3.9362 / $5.9043 | Buy Now |
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VNB35N07-E
STMicroelectronics
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Datasheet
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VNB35N07-E
STMicroelectronics
OMNIFET fully autoprotected Power MOSFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | D2PAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Configuration | COMPLEX | |
DS Breakdown Voltage-Min | 60 V | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 1350 ns | |
Turn-on Time-Max (ton) | 800 ns |
The maximum operating frequency of the VNB35N07-E is 100 kHz, but it can be operated at higher frequencies with reduced performance.
To ensure proper biasing, connect the VCC pin to a stable voltage source between 4.5V and 18V, and the GND pin to a solid ground plane. Also, ensure that the input voltage (VIN) is within the recommended range of 4.5V to 18V.
The maximum current rating of the VNB35N07-E is 35A, but it's recommended to operate within the safe operating area (SOA) to ensure reliability and prevent overheating.
Use a voltage regulator or a voltage limiter to prevent overvoltage, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage from excessive current.
The thermal resistance of the VNB35N07-E package is typically around 2.5°C/W, but this can vary depending on the specific application and cooling conditions.