Datasheets
VNB35N07-E by: STMicroelectronics

OMNIFET fully autoprotected Power MOSFET

Part Details for VNB35N07-E by STMicroelectronics

Results Overview of VNB35N07-E by STMicroelectronics

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VNB35N07-E Information

VNB35N07-E by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for VNB35N07-E

Part # Distributor Description Stock Price Buy
DISTI # 45AC7947
Newark Power Load Sw, Omnifet, 18V, To-263-3, Power Load Switch Type:Low Side, No. Of Channels:1Channels, Input Voltage:18V, Current Limit:35A, On State Resistance:0.028Ohm, Ic Case/Package:To-263 (D2Pak), No. Of Pins:3Pins, Msl:- Rohs Compliant: Yes |Stmicroelectronics VNB35N07-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
STMicroelectronics OMNIFET fully autoprotected Power MOSFET COO: China RoHS: Compliant Min Qty: 1 760
  • 1 $5.1300
  • 10 $4.6100
  • 25 $4.3500
  • 100 $3.7700
  • 250 $3.5800
  • 500 $3.2100
$3.2100 / $5.1300 Buy Now
Chip Stock   1613
RFQ
Vyrian Transistors 827
RFQ
Win Source Electronics ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET | MOSFET OMNIFET 70V 35A D2PAK 7500
  • 10 $5.9043
  • 24 $4.8445
  • 37 $4.6932
  • 51 $4.5418
  • 66 $4.3904
  • 89 $3.9362
$3.9362 / $5.9043 Buy Now

Part Details for VNB35N07-E

VNB35N07-E CAD Models

VNB35N07-E Part Data Attributes

VNB35N07-E STMicroelectronics
Buy Now Datasheet
Compare Parts:
VNB35N07-E STMicroelectronics OMNIFET fully autoprotected Power MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description D2PAK-3/2
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Configuration COMPLEX
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Max (toff) 1350 ns
Turn-on Time-Max (ton) 800 ns

VNB35N07-E Related Parts

VNB35N07-E Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the VNB35N07-E is 100 kHz, but it can be operated at higher frequencies with reduced performance.

  • To ensure proper biasing, connect the VCC pin to a stable voltage source between 4.5V and 18V, and the GND pin to a solid ground plane. Also, ensure that the input voltage (VIN) is within the recommended range of 4.5V to 18V.

  • The maximum current rating of the VNB35N07-E is 35A, but it's recommended to operate within the safe operating area (SOA) to ensure reliability and prevent overheating.

  • Use a voltage regulator or a voltage limiter to prevent overvoltage, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage from excessive current.

  • The thermal resistance of the VNB35N07-E package is typically around 2.5°C/W, but this can vary depending on the specific application and cooling conditions.

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