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Part Details for TPH11006NL,LQ(S by Toshiba America Electronic Components
Results Overview of TPH11006NL,LQ(S by Toshiba America Electronic Components
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
TPH11006NL,LQ(S Information
TPH11006NL,LQ(S by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TPH11006NL,LQ(S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09AK8981
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Newark | Mosfet, N-Ch, 60V, 40A, Sop, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Product Range:- Rohs Compliant: Yes |Toshiba TPH11006NL, LQ(S RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1973 |
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$0.4850 / $0.7930 | Buy Now |
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DISTI #
86AK6546
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Newark | Mosfet, N-Ch, 60V, 40A, Sop Rohs Compliant: Yes |Toshiba TPH11006NL, LQ(S RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3040 / $0.3640 | Buy Now |
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DISTI #
62387729
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Verical | Trans MOSFET N-CH Si 60V 40A 8-Pin SOP Advance T/R Min Qty: 162 Package Multiple: 1 | Americas - 1399 |
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$0.2350 / $0.3100 | Buy Now |
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DISTI #
TPH11006NL
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TME | Transistor: N-MOSFET, unipolar, 60V, 17A, 34W, SOP8A Min Qty: 1 | 2139 |
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$0.2870 / $0.8020 | Buy Now |
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DISTI #
TPH11006NL,LQ(S
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Avnet Asia | MOS Power Transistors LV (< 200V) (Alt: TPH11006NL,LQ(S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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$0.0913 | Buy Now |
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DISTI #
TPH11006NL,LQ(S
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 1399 |
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$0.1920 / $0.7050 | Buy Now |
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DISTI #
TPH11006NL,LQ(S
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EBV Elektronik | MOS Power Transistors LV 200V (Alt: TPH11006NL,LQ(S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for TPH11006NL,LQ(S
TPH11006NL,LQ(S CAD Models
TPH11006NL,LQ(S Part Data Attributes
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TPH11006NL,LQ(S
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TPH11006NL,LQ(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 40A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 33 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 81 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TPH11006NL,LQ(S
This table gives cross-reference parts and alternative options found for TPH11006NL,LQ(S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPH11006NL,LQ(S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK7M19-60EX | Nexperia | $0.4768 | BUK7M19-60E - N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33@en-us | TPH11006NL,LQ(S vs BUK7M19-60EX |
| BUK9M19-60EX | Nexperia | $0.4870 | BUK9M19-60E - N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33@en-us | TPH11006NL,LQ(S vs BUK9M19-60EX |
| IRFZ46NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | TPH11006NL,LQ(S vs IRFZ46NS |
| TPH11006NL | Toshiba America Electronic Components | Check for Price | Power MOSFET - Nch 30V<VDSS≤60V | TPH11006NL,LQ(S vs TPH11006NL |
TPH11006NL,LQ(S Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
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Monitor the device's voltage, current, and temperature to ensure they are within the specified limits. Use a thermal management system to prevent overheating, and implement overcurrent protection to prevent damage from excessive current.
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A ceramic capacitor with a value of 10uF to 22uF is recommended for input decoupling. The capacitor should be placed as close to the device as possible to minimize noise and ensure stable operation.
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Use a thermal imaging camera to identify hotspots, and check for signs of physical damage or contamination. Verify that the device is properly soldered and that the PCB layout is correct. Consult the datasheet and application notes for troubleshooting guidelines.
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Yes, handle the device with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposed internal components to prevent damage from electrostatic discharge.