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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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T2N7002AK,LM(T by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AM3169
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Newark | Mosfet, N-Channel, 60V, 0.2A, Sot-23 Rohs Compliant: Yes |Toshiba T2N7002AK, LM(T RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 15 |
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$0.0270 / $0.1870 | Buy Now |
DISTI #
79004880
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Verical | Trans MOSFET N-CH Si 60V 0.2A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 913 Package Multiple: 1 Date Code: 2211 | Americas - 28826 |
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$0.0249 / $0.0345 | Buy Now |
DISTI #
T2N7002AK,LM(T
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Avnet Asia | Trans MOSFET N 60V 0.2A 3-Pin SOT-23 (Alt: T2N7002AK,LM(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
T2N7002AK,LM(T
|
EBV Elektronik | (Alt: T2N7002AK,LM(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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T2N7002AK,LM(T
Toshiba America Electronic Components
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Datasheet
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T2N7002AK,LM(T
Toshiba America Electronic Components
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | Toshiba | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 4.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 0.7 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the T2N7002AK,LM is -55°C to 150°C.
Yes, the T2N7002AK,LM is suitable for high-frequency applications up to 5 GHz due to its low capacitance and high transition frequency (fT).
The recommended storage temperature range for the T2N7002AK,LM is -40°C to 100°C.
Yes, the T2N7002AK,LM is suitable for switching regulator applications due to its low on-resistance (RDS(on)) and high current handling capability.
Yes, the T2N7002AK,LM is lead-free and compliant with the European Union's Restriction of Hazardous Substances (RoHS) directive.